Surface Compensation Principles of Soft‐Lattice Nanocrystals toward High‐Performance Electroluminescence
Abstract
Abstract Surface reconstruction in electroluminescent nanocrystals (NCs) requires a delicate balance between defect passivation and preserving lattice integrity. The structural damage is exacerbated in soft‐lattice perovskite systems by the conventional ligand exchange process. Herein, a surface compensation paradigm is presented employing quaternary phosphonium iodides that synergistically repair halogen vacancies and stabilize the surface without perturbing the ionic lattice. These molecular compensators are delicately designed to be soluble in weak‐polar solvents, enabling non‐destructive ionic surface compensation. Besides, the sterically optimized ionic coordination suppresses defect generation during surface reconstruction. Resulting pure‐red light‐emitting diodes (LEDs) achieve remarkable electroluminescence performance with 28.8% peak external quantum efficiency, 1.75 V sub‐bandgap turn‐on voltage, 30.1% power conversion efficiency, and 70.0 h operational half‐lifetime at 100 cd m −2 , establishing new benchmarks for Rec.2020‐compliant devices. The relationship between the steric factor of ligands and the compensation effect is further elucidated, providing molecular design principles for soft‐lattice optoelectronic NCs.
Article Details
Authors (9)
Yifeng Feng
School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou China
Yifan He
School of Materials Science and Engineering
Meiyi Zhu
Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials Engineering Research Centre of Zhejiang Province Institute of Wenzhou Zhejiang University Wenzhou China
Hongjin Li
Department of Physics Chemistry and Biology Linköping University Linköping SE‐58183 Sweden
Qingli Cao
School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou 310027 China
HanYan Huang
School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou 310027 China
Haiping He
Zhizhen Ye
Xingliang Dai