Suppressing Non‐Radiative Decay via Cyanation: A Promising Design Strategy for Bright Organic NIR‐II Fluorophores
Abstract
Abstract Achieving high fluorescence efficiency in organic fluorophores within the second near‐infrared window (NIR‐II, 1000∼1700 nm) remains challenging, as extended π‐conjugation and active intramolecular motions typically funnel excitation energy into non‐radiative decay. Here, we present peripheral cyanation as a molecular design strategy that directly modulates excited‐state dynamics and suppresses non‐radiative relaxation. Incorporation of cyano groups (A') into the D‐A‐D scaffold of BBTCz afforded BBTCzCN with an A’‐D‐A‐D‐A’ architecture, which significantly reduced vibronic coupling compared to the parent dye. Upon encapsulation with DSPE‐ m PEG 5000 , BBTCzCN nanoparticles (NPs) retained a high FLQY of 2.8% with a record‐high brightness of 565 M −1 cm −1 , representing a 10.4‐fold enhancement over BBTCz NPs and placing it among the brightest organic NIR‐II emitters reported to date. Mechanistic studies combining density functional theory and ultrafast spectroscopy revealed that cyanation synergistically suppressed vibrational relaxation and internal conversion, thereby prolonging radiative decay pathways. As a result, BBTCzCN NPs enabled high‐resolution vascular imaging, real‐time lymphatic tracking, and precise intraoperative delineation of tumors and peritoneal metastases. This work establishes peripheral cyanation as a broadly applicable molecular design strategy for tailoring excited‐state decay pathways, advancing the development of next‐generation NIR‐II fluorophores for deep‐tissue imaging and image‐guided surgery.
Article Details
Authors (10)
Weili Wang
Jinjun Shao
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China
Diya Xie
Nanoinstitute Munich, Faculty of Physics
Leichen Wang
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing 211816 China
Kang Xu
SES AI Corp
Anqing Mei
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing 211816 China
Huili Ma
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)
Wei Han
Peng Chen
Xiaochen Dong