Superlattice reflection signatures of the insulator–metal transition in V3O5 thin films

M Md Shafiqul Islam A Alexandre Pofelski (Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA.) Y Yarimar Rivera-Robles (Department of Physics, University of Puerto Rico 1 , Mayagüez, Puerto Rico 00681,) K Kim Kisslinger F Fernando Camino A Armando Rúa (Department of Physics, University of Puerto Rico 1 , Mayagüez, Puerto Rico 00681,)

Abstract

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V3O5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO2 and provides a unique high-temperature opportunity for these types of applications. In this work, we track the structural evolution of V3O5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below TIMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at TIMT, consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V3O5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

Article Details

Volume / Issue Vol. 139, Issue 10
Published March 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

M

Md Shafiqul Islam

A

Alexandre Pofelski

Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY, USA.

Y

Yarimar Rivera-Robles

Department of Physics, University of Puerto Rico 1 , Mayagüez, Puerto Rico 00681,

K

Kim Kisslinger

F

Fernando Camino

A

Armando Rúa

Department of Physics, University of Puerto Rico 1 , Mayagüez, Puerto Rico 00681,