Sulfur‐Doped IrO<sub>2</sub> Enable Pathway Switch to Lattice Oxygen Mechanism with Enhanced Stability for Low Iridium PEM Water Electrolysis

C Chenlu Yang Y Yanping Zhu (Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong) F Fengru Zhang (Shanghai H‐Ray S&amp;T Co. Ltd. Shanghai 201108 China) L Longping Yao (Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201210 China) Y Yihe Chen T Tongchan Lu (Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai P. R. China) Q Qixuan Li J Jun Li G Guoliang Wang (School of Chinese Materia Medica) Q Qingqing Cheng H Hui Yang

Abstract

AbstractAchieving high activity and stability while minimizing Ir usage poses a significant challenge in the industrialization of proton exchange membrane water electrolysis (PEMWE). Herein we report a sulfur‐doping strategy that enables the OER pathway on IrO2 nanoparticles (IrO2/S) to switch from conventional adsorption evolution mechanism (AEM) to lattice oxygen mechanism (LOM) while maintaining Ir─O bond stability, thus achieving a significant enhancement in both intrinsic activity and durability. Advanced spectroscopies and theoretical calculations reveal that the Ir─S coordination motif within the lattice increases the electron density of the Ir center and enhances Ir─O covalency, thus triggering the LOM pathway. Importantly, the lattice distortion and unsaturated Ir─O coordination within the IrO2/S generate the oxygen nonbonding state that acts as an electron sacrificial agent to preserve Ir─O bonds upon the LOM‐dominated OER process. As a result, PEMWE integrated with such IrO2/S electrocatalyst delivers a low cell voltage (1.769 V at 2.0 A cm−2) and long‐term stability (16.6 µV h⁻¹ over 1000 h@1.0 A cm⁻2) while dramatically reducing Ir usage from 1.0 to 0.3 mg cm−2. This work establishes S doping as a viable strategy to trigger LOM and stabilize lattice oxygen redox in Ir‐based catalysts, opening a new avenue for low‐Ir PEMWEs.

Article Details

Volume / Issue Vol. 37, Issue 38
Published September 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

C

Chenlu Yang

Y

Yanping Zhu

Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong

F

Fengru Zhang

Shanghai H‐Ray S&amp;T Co. Ltd. Shanghai 201108 China

L

Longping Yao

Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai 201210 China

Y

Yihe Chen

T

Tongchan Lu

Shanghai Advanced Research Institute Chinese Academy of Sciences Shanghai P. R. China

Q

Qixuan Li

J

Jun Li

G

Guoliang Wang

School of Chinese Materia Medica

Q

Qingqing Cheng

H

Hui Yang