Substrate integrated waveguide resonator sensor for X-band dielectric constant characterization

O Omaima Talmoudi (Institut National des Postes et Télécommunications (INPT) 1 , Rabat,) Álvaro Gómez-Gómez (Departamento de Ingeniería de Comunicaciones, Universidad de Cantabria 2 , Santander,) Óscar Fernández (Unidad Interdepartamental de Desarrollo de Nuevos Fármacos Biológicos, Inmunológicos y Químicos para la Salud Global, Centro de Investigaciones Biológicas Margarita Salas, Consejo Superior de Investigaciones Científicas) J Jaouad Terhzaz (Centre Régional des Métiers de l’Éducation et de la Formation (CRMEF) 3 , Casablanca,) A Abdelwahed Tribak (Institut National des Postes et Télécommunications (INPT) 1 , Rabat,) T Tomás Fernández-Ibáñez (Departamento de Ingeniería de Comunicaciones, Universidad de Cantabria 2 , Santander,)

Abstract

This work presents the design, simulation, and experimental validation of a compact single-port microwave sensor based on substrate integrated waveguide technology. The proposed sensor consists of a circular resonant cavity implemented in a substrate integrated waveguide, with a rosette-shaped slot etched into the top copper layer to enhance electric field confinement in the sensing region. This configuration enables the accurate characterization of low-permittivity materials in the X-band frequency range. The reflection response S11 of the sensor is analyzed for various materials, including air, Teflon, and Plexiglas. The results show a clear resonance frequency shift depending on the permittivity of the material, with measured sensitivities of about 5.85% for Teflon and 3.65% for Plexiglas. The proposed structure shows good agreement between the simulation and the measurement results, as well as non-destructive characterization of dielectric properties, as the material under test is not physically or chemically altered during the measurement process.

Article Details

Volume / Issue Vol. 138, Issue 7
Published August 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

O

Omaima Talmoudi

Institut National des Postes et Télécommunications (INPT) 1 , Rabat,

Álvaro Gómez-Gómez

Departamento de Ingeniería de Comunicaciones, Universidad de Cantabria 2 , Santander,

Óscar Fernández

Unidad Interdepartamental de Desarrollo de Nuevos Fármacos Biológicos, Inmunológicos y Químicos para la Salud Global, Centro de Investigaciones Biológicas Margarita Salas, Consejo Superior de Investigaciones Científicas

J

Jaouad Terhzaz

Centre Régional des Métiers de l’Éducation et de la Formation (CRMEF) 3 , Casablanca,

A

Abdelwahed Tribak

Institut National des Postes et Télécommunications (INPT) 1 , Rabat,

T

Tomás Fernández-Ibáñez

Departamento de Ingeniería de Comunicaciones, Universidad de Cantabria 2 , Santander,