Sub‐Nanometer Curvature Unlocks Quantum Orbital Flexoelectricity in Graphene

S Sathvik Ajay Iyengar (Department of Materials Science and NanoEngineering Rice University Houston Texas USA) J James G. McHugh (National Graphene Institute University of Manchester Manchester UK) J Jonathan P. Salvage (School of Pharmacy and Biomolecular Science University of Brighton Brighton UK) R Robert Vajtai (Department of Materials Science and Nanoengineering, Rice University 1 , Houston, Texas 77005,) V Venkataramana Gadhamshetty (2D‐Materials for Biofilm Engineering, Science, and Technology Department of Civil and Environmental Engineering South Dakota School of Mines and Technology Rapid City South Dakota USA) A Alan B. Dalton (Department of Physics and Astronomy School of Mathematical and Physical Sciences University of Sussex Brighton UK) M Manoj Tripathi (2D‐Materials for Biofilm Engineering, Science, and Technology Department of Civil and Environmental Engineering South Dakota School of Mines and Technology Rapid City South Dakota USA) P Pulickel M. Ajayan V Vincent Meunier (Department of Engineering Science and Mechanics Pennsylvania State University Pennsylvania USA)

Abstract

ABSTRACT Flexoelectricity, defined as polarization induced by strain gradients, is especially pronounced in two‐dimensional (2D) materials due to their mechanical flexibility and sensitivity to deformation. In nanostructures with nanometer‐scale curvature, bending can perturb out‐of‐plane π orbitals and generate quantum‐mechanical polarization and electrostatic modulation beyond classical lattice distortion alone. Here, we combine scanning probe measurements and first‐principles calculations to provide experimental and theoretical evidence for large intrinsic quantum orbital flexoelectricity in graphene nanowrinkles (GNWrs) with estimated polarization densities of P th ∼ 4 C m −2 and P exp ∼ 1 C m −2 , exceeding those of mesoscale systems by 5 to 7 orders of magnitude. These GNWrs exhibit high apex curvature, undergo atomic‐level buckling, and produce localized strain fields, as supported by atomic force microscopy analysis and Raman spectroscopy. Kelvin probe force microscopy reveals curvature‐dependent work‐function shifts, while conductive atomic force microscopy detects reproducible GNWr‐associated currents with a threshold voltage ( Φ th ∼ 1 V) comparable to the band offset predicted by ab initio calculations (∼ 1.2 V). These results support an interpretation in which curvature‐induced flexoelectric dipoles reshape the local electronic potential. GNWrs therefore provide a structurally simple carbon‐based platform for probing quantum‐mechanical flexoelectricity.

Article Details

Volume / Issue Vol. 1, Issue 1
Published July 25, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (9)

S

Sathvik Ajay Iyengar

Department of Materials Science and NanoEngineering Rice University Houston Texas USA

J

James G. McHugh

National Graphene Institute University of Manchester Manchester UK

J

Jonathan P. Salvage

School of Pharmacy and Biomolecular Science University of Brighton Brighton UK

R

Robert Vajtai

Department of Materials Science and Nanoengineering, Rice University 1 , Houston, Texas 77005,

V

Venkataramana Gadhamshetty

2D‐Materials for Biofilm Engineering, Science, and Technology Department of Civil and Environmental Engineering South Dakota School of Mines and Technology Rapid City South Dakota USA

A

Alan B. Dalton

Department of Physics and Astronomy School of Mathematical and Physical Sciences University of Sussex Brighton UK

M

Manoj Tripathi

2D‐Materials for Biofilm Engineering, Science, and Technology Department of Civil and Environmental Engineering South Dakota School of Mines and Technology Rapid City South Dakota USA

P

Pulickel M. Ajayan

V

Vincent Meunier

Department of Engineering Science and Mechanics Pennsylvania State University Pennsylvania USA