Study of the Sb incorporation in InAs/InAsSb type-II superlattices and its influence on the band-edge profile

M M. Tornay (IES, Université de Montpellier, CNRS 1 , 34000 Montpellier,) K K. Pantzas (Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies—C2N 3 , Palaiseau 91120,) G G. Patriarche (Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies—C2N 3 , Palaiseau 91120,) J J.-P. Perez (IES, Université de Montpellier, CNRS 1 , 34000 Montpellier,) L L. Rousseaux (ENS—Laboratoire de Physique de l’Ecole normale supérieure, Université PSL, CNRS, Sorbonne Université 4 , Paris,) Y Y. Guldner (ENS—Laboratoire de Physique de l’Ecole normale supérieure, Université PSL, CNRS, Sorbonne Université 4 , Paris,) N N. Péré-Laperne (LYNRED, Actipole—CS 10021 2 , 364 route de Valence, 38113 Veurey-Voroize,) P P. Christol (IES, Université de Montpellier, CNRS 1 , 34000 Montpellier,)

Abstract

In this paper, we study the antimony distribution along the period of three InAs/InAsSb superlattices with different periods and Sb targets through multiple scanning transmission electron microscopy characterizations. The extracted Sb profiles appear to differ significantly from the targeted ones. We show that x-ray simulations are limited to determine accurately its distribution and we use the experimental profiles as inputs of a quantum structure simulation software to assess their influence on the determination of band offsets, bowing parameters, band alignments, and miniband widths. With this approach, the HH1 miniband width is broadened by a factor 2 at Γ point and the coupling with light-holes is enhanced in mid-wave short-period structures. This suggests that Sb inter-diffusion may play a less detrimental role than expected in the transport of the InAs/InAsSb material system for infrared photodetectors.

Article Details

Volume / Issue Vol. 137, Issue 16
Published April 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (8)

M

M. Tornay

IES, Université de Montpellier, CNRS 1 , 34000 Montpellier,

K

K. Pantzas

Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies—C2N 3 , Palaiseau 91120,

G

G. Patriarche

Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies—C2N 3 , Palaiseau 91120,

J

J.-P. Perez

IES, Université de Montpellier, CNRS 1 , 34000 Montpellier,

L

L. Rousseaux

ENS—Laboratoire de Physique de l’Ecole normale supérieure, Université PSL, CNRS, Sorbonne Université 4 , Paris,

Y

Y. Guldner

ENS—Laboratoire de Physique de l’Ecole normale supérieure, Université PSL, CNRS, Sorbonne Université 4 , Paris,

N

N. Péré-Laperne

LYNRED, Actipole—CS 10021 2 , 364 route de Valence, 38113 Veurey-Voroize,

P

P. Christol

IES, Université de Montpellier, CNRS 1 , 34000 Montpellier,