Structural, transport, and superconducting properties of Ir-doped Nb2− <i>x</i> Ir <i>x</i> PdSe5

S Sunny Bhakta (Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758,) R Rajveer Jha (Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758,) L Luke Sloan (Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758,) S Sanjay K. Banerjee

Abstract

We present a systematic study of the structural, normal-state transport, and superconducting properties of Ir-doped Nb2PdSe5 with nominal composition Nb2−xIrxPdSe5. Powder x-ray diffraction confirms that Ir incorporation preserves the host crystal structure without secondary phases up to x = 0.10, indicating successful substitution at the Nb site. Electrical resistivity measurements (ρ–T) show metallic behavior in the normal state. As Ir content increases, the superconducting transition temperature (Tc) decreases monotonically, accompanied by an increase in residual resistivity, suggesting enhanced impurity scattering. Low-temperature resistivity exhibits a near-quadratic temperature dependence, consistent with dominant electron–electron scattering in the normal state. Magnetization measurements confirm bulk superconductivity and show a systematic decrease in the superconducting volume fraction with increasing doping. The upper critical field (Bc2) evolves with Ir substitution, reflecting the interplay among disorder, spin–orbit coupling, and superconducting pair-breaking effects. The suppression of Tc with increasing x indicates that Ir substitution primarily introduces scattering-induced pair weakening rather than favorable electronic tuning. Hall coefficients RH and resistivity ρxy indicate a reduction in carrier density with Ir substitution in Nb2−xIrxPdSe5. These results clarify the role of chemical substitution and disorder in governing superconductivity in quasi-one-dimensional chalcogenide systems.

Article Details

Volume / Issue Vol. 139, Issue 18
Published May 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (4)

S

Sunny Bhakta

Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758,

R

Rajveer Jha

Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758,

L

Luke Sloan

Microelectronics Research Center, The University of Texas at Austin , Austin, Texas 78758,

S

Sanjay K. Banerjee