Strain‐Induced Robust Skyrmion Lattice at Room Temperature in van der Waals Ferromagnet

X Xinyi Zhou I Iftikhar Ahmed Malik R Ruihuan Duan H Hanqing Shi C Chen Liu Y Yan Luo (Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Porous Materials for Separation and Conversion, Fudan University, 220 Handan, Shanghai 200433, P. R. China) Y Yue Sun R Ruixi Chen (State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering) Y Yilin Liu S Shian Xia V Vanessa Li Zhang S Sheng Liu C Chao Zhu (School of Materials Science and Engineering) X Xixiang Zhang (Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.) Y Yi Du (State Key Laboratory of Cognitive Science and Mental Health, Institute of Psychology, Chinese Academy of Sciences) Z Zheng Liu T Ting Yu (Department of Chemistry, McGill University, 801 Sherbrooke Street W, Montréal, Quebec H3A 0B8, Canada)

Abstract

Abstract Manipulating topological magnetic orders of 2D magnets by strain, once achieved, offers enormous potential for future low‐power flexible spintronic applications. In this work, by placing Fe 3 GaTe 2 (FGaT), a room‐temperature 2D ferromagnet, on flexible substrate, a field‐free and robust formation of skyrmion lattice induced by strain is demonstrated. By applying a minimal strain of ≈0.80% to pre‐annealed FGaT flakes, the Magnetic Force Microscopy (MFM) tip directly triggers the transition from maze‐like domains to an ordered skyrmion lattice while scanning the sample surface. The skyrmion lattice is rather stable against extensive cyclic mechanical testing (stretching, bending, and twisting over 2000 cycles each). It also exhibits stability across a wide range of magnetic fields (≈2.9 kOe) and temperatures (≈323 K), as well as long‐term retention stability, highlighting its robustness and field‐free stabilization. The strain effect reduces the lattice symmetry and enhances the Dzyaloshinskii‐Moriya interaction (DMI) of FGaT, thus stabilizing the skyrmion lattice. The findings highlight the potential of FGaT for integrating magnetic skyrmions into future low‐power‐consumption flexible spintronics devices.

Article Details

Volume / Issue Vol. 37, Issue 37
Published September 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (17)

X

Xinyi Zhou

I

Iftikhar Ahmed Malik

R

Ruihuan Duan

H

Hanqing Shi

C

Chen Liu

Y

Yan Luo

Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Porous Materials for Separation and Conversion, Fudan University, 220 Handan, Shanghai 200433, P. R. China

Y

Yue Sun

R

Ruixi Chen

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Materials Science and Engineering

Y

Yilin Liu

S

Shian Xia

V

Vanessa Li Zhang

S

Sheng Liu

C

Chao Zhu

School of Materials Science and Engineering

X

Xixiang Zhang

Material Science and Engineering Program, Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, Kingdom of Saudi Arabia.

Y

Yi Du

State Key Laboratory of Cognitive Science and Mental Health, Institute of Psychology, Chinese Academy of Sciences

Z

Zheng Liu

T

Ting Yu

Department of Chemistry, McGill University, 801 Sherbrooke Street W, Montréal, Quebec H3A 0B8, Canada