Strain-tunable anionic states and work function in 2D electrenes: A DFT analysis

E Ethan Gysbertsen (Department of Physics and Atmospheric Science, Dalhousie University , Halifax, Nova Scotia B3H 4R2,) V Vahid Askarpour (Department of Physics and Atmospheric Science, Dalhousie University , Halifax, Nova Scotia B3H 4R2,) J Jesse Maassen (Department of Physics and Atmospheric Science, Dalhousie University , Halifax, Nova Scotia B3H 4R2,)

Abstract

The anionic electrons in two-dimensional (2D) electrenes form loosely bound and delocalized 2D sheets located on the surfaces and in the interstitial gaps between the atomic layers. The spatial separation of the anionic electrons from the lattice results in weakened electron–phonon coupling and low work function. Using density functional theory, we examine how the surface and interlayer states in monolayer and bilayer alkaline earth sub-pnictogenides (Ca2N, Sr2N, Sr2P, Ba2N, Ba2P, Ba2As, and Ba2Sb) vary under tensile and compressive biaxial strain up to 5%. The Ba-based electrenes display strain-induced band shifts near the Fermi level, which occur close to the zone edge where the anionic states are more localized and exhibit greater overlap with the atoms. To assess how strain affects conduction, we analyze three key transport-related metrics: the surface and interlayer state densities, which relate to the number of conducting anionic electrons, and the average distance of the anionic states from the lattice, a proxy for electron–phonon coupling. Strain can increase the state density in most bilayers and some monolayers by as much as 18%, and modulate the electron–lattice separation by up to 10%. Work function decreases with tensile strain, with bilayer Ba2Sb exhibiting the lowest value of 2.2 eV at 5% strain. These findings indicate that strain engineering can enhance conduction by increasing the number of carriers and/or suppressing electron–phonon interactions, and can promote electron donation and emission in 2D electrenes.

Article Details

Volume / Issue Vol. 139, Issue 1
Published January 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (3)

E

Ethan Gysbertsen

Department of Physics and Atmospheric Science, Dalhousie University , Halifax, Nova Scotia B3H 4R2,

V

Vahid Askarpour

Department of Physics and Atmospheric Science, Dalhousie University , Halifax, Nova Scotia B3H 4R2,

J

Jesse Maassen

Department of Physics and Atmospheric Science, Dalhousie University , Halifax, Nova Scotia B3H 4R2,