Strain-induced inhomogeneity of the superconducting state in strongly underdoped La2−<i>x</i>Sr<i>x</i>CuO4 thin films

I I. Zajcewa (Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,) M M. Chrobak (Faculty of Physics and Applied Computer Science, AGH University of Science and Technology 2 , Mickiewicza 30, 30-059 Kraków,) I I. Abaloszewa (Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,) Š. Chromik (Institute of Electrical Engineering SAV 4 , Dúbravská cesta 9, 84104 Bratislava,) M M. Talacko (Institute of Electrical Engineering SAV 4 , Dúbravská cesta 9, 84104 Bratislava,) M M. Španková (Institute of Electrical Engineering SAV 4 , Dúbravská cesta 9, 84104 Bratislava,) M M. Ożga (Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,) P P. Gierłowski (Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,) M Marta Z. Cieplak (Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,)

Abstract

The correlation between film morphology and homogeneity of the superconducting (SC) state is studied in thin, underdoped films of La2−xSrxCuO4 with substrate-induced compressive strain, which enhances SC transition temperature, Tc. Imaging techniques are used to evaluate the film surface, while the resistance and magnetoresistance are measured and subsequently analyzed by effective medium theory (EMT). It is found that the thinnest films, with the thickness of about 10 nm, exhibit the smoothest surface, the largest build-in strain, and the highest onset of Tc. However, the EMT indicates that the SC state in these films is strongly inhomogeneous, and the magnetoresistance behavior resembles that observed for Josephson junction arrays. When the film thickness is increased up to 70–110 nm, the films become less smooth and the Tc enhancement is reduced; however, homogeneity of the SC state improves dramatically. Thus, homogeneity cannot be inferred solely from surface morphology. We suggest that strong inhomogeneity of the thinnest films results from spatial variability of unrelaxed build-in strain, likely accompanied by inhomogeneous distribution of carriers. In thicker films, partial strain relaxation occurs leading to the improved homogeneity of the SC state.

Article Details

Volume / Issue Vol. 138, Issue 12
Published September 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (9)

I

I. Zajcewa

Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,

M

M. Chrobak

Faculty of Physics and Applied Computer Science, AGH University of Science and Technology 2 , Mickiewicza 30, 30-059 Kraków,

I

I. Abaloszewa

Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,

Š. Chromik

Institute of Electrical Engineering SAV 4 , Dúbravská cesta 9, 84104 Bratislava,

M

M. Talacko

Institute of Electrical Engineering SAV 4 , Dúbravská cesta 9, 84104 Bratislava,

M

M. Španková

Institute of Electrical Engineering SAV 4 , Dúbravská cesta 9, 84104 Bratislava,

M

M. Ożga

Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,

P

P. Gierłowski

Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,

M

Marta Z. Cieplak

Institute of Physics, Polish Academy of Sciences 1 , Lotników 32/46, 02-668 Warsaw,