Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications
E
Ellapu Bhanu Prakash
A
Ashok Ray
S
Sushanta Bordoloi
Article Details
Journal
Scientific Reports
Volume / Issue
Vol. 1, Issue 1
Published
May 29, 2026
ISSN
2045-2322
Publisher
Nature Portfolio
Authors (3)
E
Ellapu Bhanu Prakash
A
Ashok Ray
S
Sushanta Bordoloi
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