Strain effects on polarization in sliding ferroelectrics: Group IV carbides

Abstract

Two-dimensional sliding ferroelectric materials have garnered significant attention due to their unique ferroelectric mechanism, particularly in van der Waals bilayer and multilayer systems. Strain is a crucial factor in tuning the polarization characteristics of ferroelectric materials. In this study, we systematically investigate the effect of sliding on the ferroelectric properties of GeC, SiC, and SnC using first-principles calculations. We also explore the impact of strain on the polarization and electronic properties of these materials. Our results show that compressive strain leads to a decrease in polarization and an increase in the bandgap, while tensile strain results in an increase in polarization and a decrease in the bandgap. These findings are of great significance for further exploration and optimization of sliding ferroelectric materials in micro–nano electronic devices.