Stochastically Broken Inversion Symmetry of Van der Waals Topological Insulator for Nanoscale Physically Unclonable Functions

G Gunhyoung Kim (Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon South Korea) J Jinhyoung Lee H Hyunho Seok T Taewoo Kang M Minyoung Lee H Hyunbin Choi (Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon South Korea) S Sihoon Son (SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea) J Jinill Cho D Dongho Lee S Seowoo Son (SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea) H Hosin Hwang (Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419 South Korea) H Hyelim Shin (Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419 South Korea) S Sujeong Han G Gunhoo Woo (SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 South Korea) A Alexina Ollier (Center for Quantum Nanoscience Institute for Basic Science (IBS) Seoul 03760 South Korea) Y Yeon‐Ji Kim (Center for Quantum Nanoscience Institute for Basic Science (IBS) Seoul 03760 South Korea) L Lei Fang S Seunghwan Lee G Gyuho Han G Goo‐Eun Jung (Park Systems Corporation 109, Gwanggyo‐ro, Yeongtong‐gu Suwon‐si Gyeonggi‐do 16229 South Korea) Y Youngi Lee (Park Systems Corporation 109, Gwanggyo‐ro, Yeongtong‐gu Suwon‐si Gyeonggi‐do 16229 South Korea) H Hyeong‐U. Kim (Semiconductor Manufacturing Research Center Korea Institute of Machinery and Materials (KIMM) Daejeon 34103 South Korea) J Jungwon Park A Andreas Heinrich W Won‐Jun Jang (Center For Quantum Nanoscience Institute For Basic Science (IBS) Seoul South Korea) S Seok Joon Kwon T Taesung Kim

Abstract

Abstract Owing to the exotic state of quantum matter, topological insulators have emerged as a significant platform for new‐generation functional devices. Among these topological insulators, tetradymites have received significant attention because of their van der Waals (vdW) structures and inversion symmetries. Although this inversion symmetry completely blocks exotic quantum phenomena, it should be broken down to facilitate versatile topological functionalities. Recently, a Janus structure is suggested for asymmetric out‐of‐plane lattice structures, terminating the heterogeneous atoms at two sides of the vdW structure. However, the synthesis of Janus structures has not been achieved commercially because of the imprecise control of the layer‐by‐layer growth, high‐temperature synthesis, and low yield. To overcome these limitations, plasma sulfurization of vdW topological insulators has been presented, enabling stochastic inversion asymmetry. To take practical advantage of the random lattice distortion, physically unclonable functions (PUFs) have been suggested as applications of vdW Janus topological insulators. The sulfur dominance is experimentally demonstrated via X‐ray photoelectron spectroscopy, hysteresis variation, cross‐sectional transmission electron microscopy, and adhesion energy variation. In conclusion, it is envisioned that the vdW Janus topological insulators can provide an extendable encryption platform for randomized lattice distortion, offering on‐demand stochastic inversion asymmetry via a single‐step plasma sulfurization.

Article Details

Volume / Issue Vol. 37, Issue 13
Published April 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (27)

G

Gunhyoung Kim

Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon South Korea

J

Jinhyoung Lee

H

Hyunho Seok

T

Taewoo Kang

M

Minyoung Lee

H

Hyunbin Choi

Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon South Korea

S

Sihoon Son

SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea

J

Jinill Cho

D

Dongho Lee

S

Seowoo Son

SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon South Korea

H

Hosin Hwang

Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419 South Korea

H

Hyelim Shin

Department of Semiconductor Convergence Engineering Sungkyunkwan University Suwon 16419 South Korea

S

Sujeong Han

G

Gunhoo Woo

SKKU Advanced Institute of Nanotechnology (SAINT) Sungkyunkwan University Suwon 16419 South Korea

A

Alexina Ollier

Center for Quantum Nanoscience Institute for Basic Science (IBS) Seoul 03760 South Korea

Y

Yeon‐Ji Kim

Center for Quantum Nanoscience Institute for Basic Science (IBS) Seoul 03760 South Korea

L

Lei Fang

S

Seunghwan Lee

G

Gyuho Han

G

Goo‐Eun Jung

Park Systems Corporation 109, Gwanggyo‐ro, Yeongtong‐gu Suwon‐si Gyeonggi‐do 16229 South Korea

Y

Youngi Lee

Park Systems Corporation 109, Gwanggyo‐ro, Yeongtong‐gu Suwon‐si Gyeonggi‐do 16229 South Korea

H

Hyeong‐U. Kim

Semiconductor Manufacturing Research Center Korea Institute of Machinery and Materials (KIMM) Daejeon 34103 South Korea

J

Jungwon Park

A

Andreas Heinrich

W

Won‐Jun Jang

Center For Quantum Nanoscience Institute For Basic Science (IBS) Seoul South Korea

S

Seok Joon Kwon

T

Taesung Kim