Stereochemically Active Lone Pair Effect of Cations Triggers Giant Rashba–Dresselhaus Spin Splitting in Ferroelectric Semiconductors for Circularly Polarized Light Detection

J Jia‐Hang Wu (Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics School of Chemistry and Chemical Engineering Southeast University Nanjing Jiangsu P. R. China) W Wei Wang C Cheng‐Ao Ji (Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing Jiangsu China) N Na Wang C Chang‐Chun Fan (School of Materials Engineering Jinling Institute of Technology Nanjing China) L Le‐Ping Miao (Chaotic Matter Science Research Center Department of Materials Metallurgy and Chemistry Jiangxi University of Science and Technology Ganzhou Jiangxi China) Q Qiang‐Qiang Bi (Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics School of Chemistry and Chemical Engineering Southeast University Nanjing Jiangsu P. R. China) C Cheng‐Dong Liu (Jiangsu Key Laboratory For Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing China) C Chao‐Yang Chai (Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing 211189 China) R Rui Zuo (Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing 211189 China) S Shu‐Yin Jia (Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing 211189 China) X Xue‐Zeng Lu (Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing Jiangsu China) W Wen Zhang

Abstract

ABSTRACT Rashba–Dresselhaus (RD) spin splitting arising from spin‐orbit coupling in spatial inversion asymmetric semiconductors is critical for realizing numerous advanced spintronic applications. However, modulating the RD spin splitting coefficient ( α RD ) is challenging due to the unclear structural‐property relationship. Herein, inspired by highly distorted inorganic selenites containing stereochemically active lone pair (SCALP) electrons, we selected 4‐aminomorpholine cation (4AM) containing SCALP electrons to synthesize a new two‐dimensional (2D) ferroelectric semiconductor (4AM) 2 PbBr 4 , exhibiting a giant α RD of 2.377 eV Å with Δ E RD = 126 meV and Δ k 0 = 0.106 Å −1 that differentiates circularly polarized light‐excited carriers in the momentum space via spin‐dependent optical transition selection rules with an asymmetric factor of 0.65. A geometric structure‐property relationship study reveals that incorporating SCALP into the organic cations enhances their net polarity and induces substantial distortions within the inorganic sublattices that enhance the α RD . This work reveals the regulatory mechanism of organic cations on distortion of inorganic octahedron and provides a new approach for efficient synthesis and rapid screening of 2D ferroelectric semiconductors with large α RD .

Article Details

Volume / Issue Vol. 38, Issue 17
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

J

Jia‐Hang Wu

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics School of Chemistry and Chemical Engineering Southeast University Nanjing Jiangsu P. R. China

W

Wei Wang

C

Cheng‐Ao Ji

Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing Jiangsu China

N

Na Wang

C

Chang‐Chun Fan

School of Materials Engineering Jinling Institute of Technology Nanjing China

L

Le‐Ping Miao

Chaotic Matter Science Research Center Department of Materials Metallurgy and Chemistry Jiangxi University of Science and Technology Ganzhou Jiangxi China

Q

Qiang‐Qiang Bi

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics School of Chemistry and Chemical Engineering Southeast University Nanjing Jiangsu P. R. China

C

Cheng‐Dong Liu

Jiangsu Key Laboratory For Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing China

C

Chao‐Yang Chai

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing 211189 China

R

Rui Zuo

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing 211189 China

S

Shu‐Yin Jia

Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics and School of Chemistry and Chemical Engineering Southeast University Nanjing 211189 China

X

Xue‐Zeng Lu

Key Laboratory of Quantum Materials and Devices of Ministry of Education School of Physics Southeast University Nanjing Jiangsu China

W

Wen Zhang