Stacking Fault Energy Engineering as the Pathway to Materials With Exceptional Performance

J Jiacheng Yu (Molecular Medicine Program, The Hospital for Sick Children) R Ran Ding (State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering) Y Yongchang Liu (Institute for Advanced Materials and Technology, State Key Laboratory for Advanced Metals and Materials)

Abstract

ABSTRACT Stacking fault energy (SFE) is a core thermodynamic parameter governing defect evolution, offering a critical pathway to circumvent the strength‐ductility trade‐off in advanced materials. However, its precise prediction faces a profound physical discrepancy: the ideal intrinsic SFE ( γ isf ) predicted by first‐principles calculations often deviates significantly from experimentally measured apparent SFE ( γ app ), which is intensely modulated by microstructural constraints and local chemistry. Furthermore, SFE tailoring paradigms differ fundamentally across material systems. In complex metallic solid solutions, such as high and medium entropy alloys, SFE engineering relies predominantly on macroscopic alloying and reshaping the dynamic generalized stacking fault energy (GSFE) landscape via chemical ordering. Conversely, in non‐metallic materials like structural oxides and advanced ceramics, compositional tuning is generally insufficient. Overcoming their intrinsic brittleness requires transforming the SFE into a defect‐conditioned dynamic energy landscape, manipulating planar fault nucleation and thermodynamic stability via defect chemistry, interfacial templating, and non‐equilibrium processing. This review summarizes the fundamental physical frameworks of SFE engineering, comparing cutting‐edge tailoring strategies and their mechanical impacts across metallic and non‐metallic systems to guide the design of next‐generation structural materials.

Article Details

Volume / Issue Vol. 1, Issue 1
Published May 22, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (3)

J

Jiacheng Yu

Molecular Medicine Program, The Hospital for Sick Children

R

Ran Ding

State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering

Y

Yongchang Liu

Institute for Advanced Materials and Technology, State Key Laboratory for Advanced Metals and Materials