Stable Pure‐Green Hyperfluorescent Organic Light‐Emitting Diodes with Ultimate Efficiency at High Brightness Toward Rec 2020 Standard

M Myungsun Sim (Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea) S Seon Jeong Lee (Department of Chemistry and Research Institute of Molecular Alchemy Gyeongsang National University Jinju Republic of Korea) H Hongsoo Lee (Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea) M Minjung Kim (UK Dementia Research Institute, Institute of Neurology, University College London, London, UK.) Y Yasushi Koishikawa (Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea) J Joon Heo (Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea) O Oul Cho (Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea) H Hyung Jin Cheon (Department of Chemistry and Research Institute of Molecular Alchemy Gyeongsang National University Jinju Republic of Korea) S Su Bin Lee S Sung Hun Lee (Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea) T Taekyung Kim (Korea Basic Science Institute (KBSI)) Y Yoo Na Song (Department of Chemical Engineering Kyung Hee University Yongin Republic of Korea) B Byoung Ki Choi (Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea) Y Yun‐Hi Kim (Department of Chemistry and RIMA Gyeongsang National University Jinju Republic of Korea)

Abstract

ABSTRACT Multi‐resonance thermally activated delayed fluorescence (MR‐TADF) emitters represent a promising platform for high‐efficiency, wide‐color‐gamut OLEDs. However, current green MR‐TADF emitters face challenges in simultaneously achieving high color purity, high efficiency at high brightness, and high device stability. In this study, we report the synthesis and device integration of a novel MR‐TADF emitter, DBF‐v‐DABNA. Designed with a rigid meta‐dibenzofuran framework and meta‐phenyl related two boron units, the molecule exhibits narrowband pure‐green emission (FWHM = 16–19 nm) and a high horizontal dipole ratio (94%). Moreover, sufficient steric shielding of the MR core suppresses exciton loss from Dexter energy transfer (DET). When incorporated into hyperfluorescent (HF) bottom‐emitting OLED architectures, DBF‐v‐DABNA achieved high external quantum efficiencies (EQE) exceeding 35 % with negligible roll‐off, CIEy ≥ 0.73, superior brightness stability up to 7.2 × 10 5 cd m −2 , and device lifetimes exceeding 600 h at 5000 cd m −2 . The top‐emitting configuration reached BT.2020 green coordinates with record‐setting current efficiency (233 cd A − 1 ). These results highlight DBF‐v‐DABNA as a promising pure‐green emitter for next‐generation UHD OLED displays requiring high efficiency and color purity.

Article Details

Volume / Issue Vol. 38, Issue 28
Published May 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

M

Myungsun Sim

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea

S

Seon Jeong Lee

Department of Chemistry and Research Institute of Molecular Alchemy Gyeongsang National University Jinju Republic of Korea

H

Hongsoo Lee

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea

M

Minjung Kim

UK Dementia Research Institute, Institute of Neurology, University College London, London, UK.

Y

Yasushi Koishikawa

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea

J

Joon Heo

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea

O

Oul Cho

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea

H

Hyung Jin Cheon

Department of Chemistry and Research Institute of Molecular Alchemy Gyeongsang National University Jinju Republic of Korea

S

Su Bin Lee

S

Sung Hun Lee

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea

T

Taekyung Kim

Korea Basic Science Institute (KBSI)

Y

Yoo Na Song

Department of Chemical Engineering Kyung Hee University Yongin Republic of Korea

B

Byoung Ki Choi

Samsung Advanced Institute of Technology Samsung Electronics Co., Ltd Suwon Republic of Korea

Y

Yun‐Hi Kim

Department of Chemistry and RIMA Gyeongsang National University Jinju Republic of Korea