Stable Antisymmetric Magnetoresistance in Fe ₃ GaTe ₂ /InSe/Fe ₃ GaTe ₂ van der Waals Heterostructures With Multi‐State Functionality

Abstract

ABSTRACT Ferromagnetic van der Waals (vdW) heterostructures are pivotal for next‐generation spintronics, especially in realizing novel functionalities like antisymmetric magnetoresistance (ASMR). While ASMR holds immense potential for multi‐state memory and logic operations, achieving stable performance across a broad range of conditions and realizing diverse multi‐state functionalities remain key challenges. Here, we report the demonstration of multi‐state ASMR signals in a Fe 3 GaTe 2 /InSe/Fe 3 GaTe 2 vdW heterostructure, effectively operating up to 320 K. Intriguingly, the conventional three‐state ASMR undergoes a unique temperature‐induced shape reversal, which is precisely correlated with the temperature‐dependent crossover of the coercive fields of the two Fe 3 GaTe 2 layers. Through adapted measurement configurations, an unconventional four‐state ASMR, featuring distinct high, intermediate‐1, intermediate‐2, and low resistance states, has been obtained, holding significant promise for enhancing multi‐state memory density. Crucially, the device exhibits superior signal stability across wide variations in bias current (0.01–100 µA ) and magnetic field angle (0 ° –360 ° ). Programmable prototype devices demonstrating highly distinguishable states are also presented. The junction resistance of our devices is only a few kiloohms owing to the perfect Fermi level alignment between Fe 3 GaTe 2 and InSe, making them highly compatible with complementary metal–oxide–semiconductor circuits. This work lays a solid foundation for future stable multi‐state memory applications.