Spin–Orbit‐Driven Quarter Semimetals in Rhombohedral Graphene
Abstract
Abstract Semimetals exhibit intriguing characteristics attributed to the coexistence of both electrons and holes. In rhombohedral multilayer graphene, a strong trigonal warping effect gives rise to a semi‐metallic state near the Fermi surface, offering unique opportunities to explore the interplay of semi‐metallic properties with strong correlations and topologies. Here, the observation of quarter semimetals in rhombohedral multilayer graphene by introducing spin–orbit coupling (SOC) is reported. The semi‐metallic characteristics of rhombohedral graphene manifest as nearly vanished Hall resistance and parabolic longitudinal resistance. The strong correlations arising from the surface flat band lead to spontaneous symmetry breaking. SOC proximitized by WSe 2 further lifts the valley degeneracy, resulting in the spontaneous time‐reversal symmetry breaking, as evidenced by the hysteretic anomalous Hall effect. The coexistence of fully polarized electrons and holes allows for the observation of a nonmonotonic temperature dependence of the anomalous Hall resistance. Furthermore, the application of moderate magnetic fields induces a phase transition from quarter semimetals to Chern insulators. These findings establish rhombohedral multilayer graphene as an ideal platform for studying strong correlations and topologies in semimetals.
Article Details
Authors (10)
Jing Ding
Hanxiao Xiang
Key Laboratory for Quantum Materials of Zhejiang Province Department of Physics School of Science Westlake University Hangzhou 310030 China
Naitian Liu
Key Laboratory for Quantum Materials of Zhejiang Province Department of Physics School of Science Westlake University Hangzhou 310030 China
Wenqiang Zhou
Key Laboratory for Quantum Materials of Zhejiang Province Department of Physics School of Science Westlake University Hangzhou 310030 China
Xinjie Fang
Key Laboratory for Quantum Materials of Zhejiang Province Department of Physics School of Science Westlake University Hangzhou 310030 China
Zhangyuan Chen
Le Zhang
Kenji Watanabe
Takashi Taniguchi
Shuigang Xu