Spin–orbit torque-induced magnetization switching in electrochemically deposited CoPt oriented polycrystalline film
Abstract
Current-induced spin–orbit torque (SOT) offers an efficient method of manipulating magnetization and is widely applied in emerging three-dimensional (3D) magnetic memory technologies. Electrochemical deposition presents a promising route for fabricating such 3D structures; yet, achieving high-quality magnetic films and spintronics phenomena remains challenging. Here, we demonstrate SOT in an electrochemically deposited 7.3 nm-thick CoPt thin film with strong perpendicular magnetic anisotropy, grown on a Pt seed layer, which serves as the spin source for this system. Accurate analysis of the SOT effective field using combined second-harmonic Hall measurements revealed the existence of SOT and its dependence on the magnetization angle. Furthermore, current-induced magnetization switching was achieved in a 2.8 nm-thick CoPt alloy film. This work unveils the potential of electrochemical deposition for next-generation 3D spintronics device applications.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (10)
Tongshuang Huang
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , 2-12-1 Ookayama, Meguro City, Tokyo 152-8552,
Shinji Isogami
Research Center for Magnetic and Spintronic Materials, National Institute for Material Science 2 , 1-2-1 Sengen, Tsukuba City, Ibaraki 305-0047,
Takanori Shirokura
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , 2-12-1 Ookayama, Meguro City, Tokyo 152-8552,
Md. Mahmuldul Hasan
Research Organization for Nano and Life Innovation, Waseda University 4 , Shinjuku City, Tokyo 162-0041,
Mikiko Saito
Research Organization for Nano and Life Innovation, Waseda University 4 , Shinjuku City, Tokyo 162-0041,
Jun Uzuhashi
National Institute for Materials Science 3 , Tsukuba, Ibaraki 305-0047,
Tadakatsu Ohkubo
Shinya Kasai
Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS) 2 , 1-2-1 Sengen, Tsukuba 305-0047,
Shigeki Nakagawa
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , 2-12-1 Ookayama, Meguro City, Tokyo 152-8552,
Yota Takamura
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , 2-12-1 Ookayama, Meguro City, Tokyo 152-8552,