Spatially‐Controlled Planar Guided Crystallization of Low‐Loss Phase Change Materials for Programmable Photonics

F Fouad Bentata (CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France) A Arnaud Taute (CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France) C Capucine Laprais (CNRS, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 , 69130 Ecully,) R Régis Orobtchouk (CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France) E Eva Kempf (STMicroelectronics 850 Rue Jean Monnet Crolles 38920 France) A Alban Gassenq (Universite Claude Bernard Lyon 1, CNRS Institut Lumière Matière, UMR5306 Villeurbanne F‐69100 France) Y Yves Pipon (Univ. Claude Bernard Lyon 1 ‐ CNRS/IN2P3 IP2I (UMR 5822) Villeurbanne 69622 France) M Michele Calvo (STMicroelectronics 850 Rue Jean Monnet Crolles 38920 France) V Valérie Martinez (Universite Claude Bernard Lyon 1, CNRS Institut Lumière Matière, UMR5306 Villeurbanne F‐69100 France) S Stéphane Monfray (STMicroelectronics 850 Rue Jean Monnet Crolles 38920 France) G Guillaume Saint‐Girons (CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France) N Nicolas Baboux (CNRS, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 , 69130 Ecully,) H Hai Son Nguyen (CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France) X Xavier Letartre (CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France) L Lotfi Berguiga (CNRS, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 , 69130 Ecully,) P Patrice Genevet S Sebastien Cueff (Université Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270 4 , 69130 Ecully,)

Abstract

Abstract Photonic integrated devices are progressively evolving beyond passive components into fully programmable systems, notably driven by the progress in chalcogenide phase‐change materials (PCMs) for non‐volatile reconfigurable nanophotonics. However, the stochastic nature of their crystal grain formation results in strong spatial and temporal crystalline inhomogeneities. Here, the concept of spatially‐controlled planar guided crystallization is proposed, a novel method for programming the growth of optically homogeneous low‐loss Sb 2 S 3 PCM, leveraging the seeded directional and progressive crystallization within confined channels. This guided crystallization method is experimentally shown to circumvent the current limitations of conventional PCM‐based nanophotonic devices, including a multilevel non‐volatile optical phase‐shifter exploiting a silicon nitride‐based Mach–Zehnder interferometer, and a programmable metasurface with spectrally reconfigurable bound state in the continuum. Precisely controlling the growth of PCMs to ensure optically uniform crystalline properties across devices is the cornerstone for the industrial development of non‐volatile reconfigurable photonic integrated circuits.

Article Details

Volume / Issue Vol. 38, Issue 8
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (17)

F

Fouad Bentata

CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France

A

Arnaud Taute

CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France

C

Capucine Laprais

CNRS, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 , 69130 Ecully,

R

Régis Orobtchouk

CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France

E

Eva Kempf

STMicroelectronics 850 Rue Jean Monnet Crolles 38920 France

A

Alban Gassenq

Universite Claude Bernard Lyon 1, CNRS Institut Lumière Matière, UMR5306 Villeurbanne F‐69100 France

Y

Yves Pipon

Univ. Claude Bernard Lyon 1 ‐ CNRS/IN2P3 IP2I (UMR 5822) Villeurbanne 69622 France

M

Michele Calvo

STMicroelectronics 850 Rue Jean Monnet Crolles 38920 France

V

Valérie Martinez

Universite Claude Bernard Lyon 1, CNRS Institut Lumière Matière, UMR5306 Villeurbanne F‐69100 France

S

Stéphane Monfray

STMicroelectronics 850 Rue Jean Monnet Crolles 38920 France

G

Guillaume Saint‐Girons

CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France

N

Nicolas Baboux

CNRS, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 , 69130 Ecully,

H

Hai Son Nguyen

CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France

X

Xavier Letartre

CNRS, Ecole Centrale de Lyon, INSA Lyon Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 Ecully 69130 France

L

Lotfi Berguiga

CNRS, Ecole Centrale de Lyon, INSA Lyon, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270 , 69130 Ecully,

P

Patrice Genevet

S

Sebastien Cueff

Université Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270 4 , 69130 Ecully,