Site-Selective Excitation of Defects Promotes Ultrafast Hot-Electron Transfer at the Semiconductor Interface
Article Details
Journal Info
Journal of the American Chemical Society
American Chemical Society
Authors (12)
Tianjun Wang
State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023 Liaoning, P. R. China
Kaiping Wang
School of Physics and Electronics
Huizhi Xie
State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023 Liaoning, P. R. China
Wei Chen
Yajie Gao
State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023 Liaoning, P. R. China
Shucai Xia
State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023 Liaoning, P. R. China
Haochen Wang
Smart Hybrid Materials (SHMs) Laboratory, Physical Science and Engineering (PSE) Division
Bo Wen
School of Physics and Electronics
Zefeng Ren
State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023 Liaoning, P. R. China
Annabella Selloni
Department of Chemistry
Xueming Yang
State Key Laboratory of Chemical Reaction Dynamics and Dalian Coherent Light Source, Dalian Institute of Chemical Physics
Chuanyao Zhou
State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023 Liaoning, P. R. China