Simultaneous improvement of glass transition temperature and dielectric properties of epoxy resin through novel curing agent molecular designs

X Xubin Wang (State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,) Y Yirui Yao (State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,) W Wenju Wu (School of Materials Science and Chemical Engineering, Harbin University of Science and Technology 4 , Harbin 150040,) C Changhai Zhang (State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,) H Hongbowen Cui (State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,) T Tiandong Zhang C Chao Yin (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China) C Chao Tang Q Qingguo Chi (State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,)

Abstract

With the development of third-generation SiC semiconductor power devices, the thermal resistance and dielectric properties of traditional epoxy resins can no longer meet the demands of high-temperature and high-voltage operating environments. To solve this problem, a novel epoxy resin curing agent was designed in this study. Diaminodiphenyl sulfone (DDS) was used as the raw material; a substitution reaction was carried out with a trifluoromethylating electrophilic reagent [1-trifluoromethyl-1,2-benzoxazol-3(1H)-one] to obtain the novel epoxy curing agent (DDS-CF3). After curing, a highly cross-linked epoxy resin having a glass transition temperature of 312.5 °C and an AC breakdown field strength of 144.3 kV/mm was obtained. The epoxy resin maintained a low dielectric constant and low loss characteristics within the frequency range of 101–106 Hz, demonstrating excellent potential as an insulating material for semiconductor power device packaging.

Article Details

Volume / Issue Vol. 164, Issue 9
Published March 07, 2026
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (9)

X

Xubin Wang

State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,

Y

Yirui Yao

State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,

W

Wenju Wu

School of Materials Science and Chemical Engineering, Harbin University of Science and Technology 4 , Harbin 150040,

C

Changhai Zhang

State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,

H

Hongbowen Cui

State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,

T

Tiandong Zhang

C

Chao Yin

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China

C

Chao Tang

Q

Qingguo Chi

State Key Laboratory of High-Performance Special Cable Technology, Harbin University of Science and Technology 1 , Harbin 150080,