Simultaneous Charge Extraction Enhancement and Defect Passivation Via a Planar Conjugated Molecular Interface Enable 22.49%‐Efficient Inorganic Perovskite Solar Cells

R Rui Li Q Qiyong Chen H Hao Zhang Z Zhiteng Wang (Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P.R. China) T Tianxiang Zhou X Xiaolong Feng Y Yachao Du (Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China) J Junqi Zhang L Lili Xi (Materials Genome Institute Shanghai University Shanghai 200444 P.R. China) Q Qingwen Tian (Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P.R. China) S Shengzhong (Frank) Liu (Institute For Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an China)

Abstract

Abstract Rational molecular design at the perovskite/hole transport layer (HTL) interface presents a viable strategy to suppress nonradiative recombination in CsPbI 3‐x Br x ‐based perovskite solar cells (PSCs). However, simultaneously achieving efficient defect passivation and rapid charge extraction with a single molecular modifier remains challenging. Herein, we employ a planar conjugated molecule, 1,8‐naphthyridin‐2‐amine (2‐NA), as a multifunctional interfacial modifier that concurrently enhances charge extraction and suppresses interfacial recombination in CsPbI 3‐x Br x PSCs. Combined density functional theory (DFT) calculations and experimental analyses reveal that 2‐NA forms a dense protective layer via noncovalent interactions (e.g., π‐π stacking and hydrogen bonding), effectively passivating undercoordinated Pb 2+ while inhibiting ion migration. Remarkably, 2‐NA incorporation facilitates hot‐carrier extraction, reducing the carrier cooling time from 515 to 240 fs and quadrupling the carrier diffusion length, thereby improving charge transport. As a result, the optimized device achieves a power conversion efficiency (PCE) of 22.49%, the highest reported value for this class of PSCs to date. Furthermore, the device retains 93.6% of its initial PCE after 1008 h under ambient conditions, demonstrating exceptional stability. This work offers a promising molecular engineering approach for enhancing the performance and durability of inorganic PSCs through interfacial modification.

Article Details

Volume / Issue Vol. 64, Issue 39
Published September 22, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (11)

R

Rui Li

Q

Qiyong Chen

H

Hao Zhang

Z

Zhiteng Wang

Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P.R. China

T

Tianxiang Zhou

X

Xiaolong Feng

Y

Yachao Du

Southwest United Graduate School, National Center for International Joint Research of Photoelectric Energy Materials and Application, School of Materials and Energy Yunnan University Kunming China

J

Junqi Zhang

L

Lili Xi

Materials Genome Institute Shanghai University Shanghai 200444 P.R. China

Q

Qingwen Tian

Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 P.R. China

S

Shengzhong (Frank) Liu

Institute For Advanced Energy Materials School of Materials Science and Engineering Shaanxi Normal University Xi'an China