Simulation of multilevel magnetic data storage via domain wall nucleation
Abstract
We present micromagnetic simulations of spin–orbit torque (SOT)-induced multistate magnetization switching in a ferromagnetic layer with perpendicular anisotropy, conducted without an external magnetic field. Four volatile states are excited by a constant current. Each volatile state, after the removal of the current and undergoing relaxation and stabilization, can transition into one of four stable nonvolatile states. Further analysis revealed that, by specifically controlling the amplitude and active/inactive intervals of a rectangular pulse, a volatile state can transition to a robust nonvolatile state, providing a viable approach for multilevel magnetic data storage. The resistance of each magnetic domain state is qualitatively calculated, and their differences make these multilevel states detectable for information reading.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (9)
Xuan Wang
Bo Li
Yu Du
Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics
Shiwei Meng
Department of Physics, School of Science, Lanzhou University of Technology 1 , Lanzhou 730050,
Yaojin Li
Department of Physics, School of Science, Lanzhou University of Technology 2 , Lanzhou 730050,
Yang Li
Yan Wang
Fu Zheng
College of Chemistry and Molecular Engineering, Synthetic and Functional Biomolecules Center, Beijing National Laboratory for Molecular Sciences, McGovern Institute for Brain Research, Key Laboratory of Bioorganic Chemistry and Molecular Engineering of Ministry of Education, Peking University
Liwang Liu