Significantly Unconventional Enhancement of Anomalous Hall Angle in Magnetic Weyl Semimetal Co <sub>3</sub> Sn <sub>2</sub> S <sub>2‐x</sub> Se <sub>x</sub>

L Lin Cao I Iftikhar Ahmed Malik Y Yang Wu (Hefei National Research Center for Physical Science at Microscale) S Su‐Tao Sun (National Laboratory of Solid State Microstructures Nanjing University Nanjing China) Y Yang‐Yang Lv (National Laboratory of Solid State Microstructures Nanjing University Nanjing China) S Shu‐Hua Yao (National Laboratory of Solid State Microstructures Nanjing University Nanjing China) J Jian Zhou Z Zhihuang Xu (State Key Laboratory of Functional Crystals and Devices Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou China) C Cheng Chen V Vanessa Li Zhang T Ting Yu (Department of Chemistry, McGill University, 801 Sherbrooke Street W, Montréal, Quebec H3A 0B8, Canada) Y Yanbin Chen D Di Wu Y Yan‐Feng Chen (National Laboratory of Solid State Microstructures Nanjing University Nanjing China)

Abstract

ABSTRACT Theoretically, introducing inhomogeneous magnetization into magnetic topological Weyl semimetals can dramatically enhance the anomalous Hall conductivity owing to the chiral‐gauge field effect. However, an enhancement strategy remains elusive. Here, we demonstrate the successful generation of inhomogeneous magnetization in a recently discovered magnetic Weyl semimetal Co 3 Sn 2 S 2 by introducing a dopant with strong spin–orbit coupling. The giant anomalous Hall angle reached 42% at 130 K, even under a relatively weak magnetic field (∼0.1 T), making it the highest reported value. Theoretical and magnetic microstructure analyses suggest that the significantly enhanced anomalous Hall effect may be due to the chiral‐gauge field induced directly by inhomogeneous magnetization in real‐space. Furthermore, considering the electronic band structure of Co 3 Sn 2 S 2 and the chiral‐gauge field, the theoretical Hall resistivity is quantitatively in good agreement with the experimental value. This study demonstrated the feasibility of dramatically manipulating the physical properties of Anomalous‐Hall‐angmagnetic topological materials using magnetic microstructure engineering.

Article Details

Volume / Issue Vol. 38, Issue 18
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

L

Lin Cao

I

Iftikhar Ahmed Malik

Y

Yang Wu

Hefei National Research Center for Physical Science at Microscale

S

Su‐Tao Sun

National Laboratory of Solid State Microstructures Nanjing University Nanjing China

Y

Yang‐Yang Lv

National Laboratory of Solid State Microstructures Nanjing University Nanjing China

S

Shu‐Hua Yao

National Laboratory of Solid State Microstructures Nanjing University Nanjing China

J

Jian Zhou

Z

Zhihuang Xu

State Key Laboratory of Functional Crystals and Devices Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou China

C

Cheng Chen

V

Vanessa Li Zhang

T

Ting Yu

Department of Chemistry, McGill University, 801 Sherbrooke Street W, Montréal, Quebec H3A 0B8, Canada

Y

Yanbin Chen

D

Di Wu

Y

Yan‐Feng Chen

National Laboratory of Solid State Microstructures Nanjing University Nanjing China