Self‐Consistent Cation–Anion Integration Eliminates Passivation Crosstalk for Inverted Perovskite Solar Cells
Abstract
Abstract The wide‐bandgap (WBG) absorber in silicon/perovskite tandem solar cells face persistent challenges of interfacial defects and energy‐level misalignment. Although dual‐cation passivators have demonstrated the potential to address these issues simultaneously, their efficacy is hindered by cation competition for binding sites and modification conflicts, which limit further device improvement. To overcome these limitations, we introduce a self‐consistent cation–anion integrated passivation (SCAP) strategy, designing a multifunctional passivator, PDA(TFA) 2 , where the bipolar trifluoroacetate (TFA) anion is paired with 1,3‐propanediamine (PDA) cations. This SCAP approach eliminates cation competition by enabling defect and field‐effect passivation in a unified framework. Specifically, the bipolar TFA anion efficiently passivates halide vacancies and bridges the perovskite and C 60 interface, while the PDA cations induce surface dipoles and optimize band alignment. Therefore, optimized 1.68 eV WBG perovskite solar cells achieve a high power conversion efficiency (PCE) of 23.23% with an exceptional open‐circuit voltage of 1.27 V. Furthermore, this strategy achieves a 32.33% PCE (31.47% certified stabilized PCE) for a 0.945 cm 2 monolithic perovskite/silicon tandem cell, delivering an ultra‐high 1.992 V open‐circuit voltage. These findings underscore the transformative potential of the SCAP strategy in advancing the efficiency and stability of WBG perovskite photovoltaics, paving the way for next‐generation tandem solar cells.
Article Details
Authors (15)
Zhen Guan
Zejun Wei
Experimental Centre for Advanced Materials School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China
Xiangyu Sun
Yihan Zhang
Zhihao Chai
Beijing Key Laboratory of Construction‐Tailorable Advanced Functional Materials and Green Applications Experimental Center of Advanced Materials School of Materials Science and Engineering Beijing Institute of Technology Beijing 100081 China
Qingya Wang
Yansong Yue
Advanced Research Institute of Multidisciplinary Sciences Beijing Institute of Technology Zhuhai 519088 China
Yao Zhang
Ziying Li
Mengfan Qiu
Fangze Liu
Qi Chen
Yihua Chen
Jing Wei
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering
Hongbo Li