Selenite‐Directed Organotin–Oxo Macrocycles for Nanolithography

J Juan Wang (Department of Chemical and Biomolecular Engineering) M Ming‐Bu Luo (State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou Fujian 350002 China) Z Zi‐Juan Wei (State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China) E Er‐Xia Chen (State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian China) J Jin‐Xia Yang (State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian China) J Jian Zhang Q Qipu Lin (State Key Laboratory of Structural Chemistry)

Abstract

Abstract The systematic design of organotin–oxo macrocycles with enhanced extreme ultraviolet (EUV) photon‐harvesting capability and sub‐50 nm lithographic resolution remains a pivotal challenge in advancing nanofabrication technologies. Herein, we present a novel series of polynuclear n butyltin–oxygen macrocycles— Sn 8 , Sn 12 ‐α , Sn 12 ‐β , and Sn 12 Fe 18 —constructed through selenite ligand‐driven supramolecular assembly. Among these, Sn 12 ‐α demonstrated exceptional electron beam lithography (EBL) performance, achieving a critical dimension resolution of 50 nm at a low dose of 50 µC·cm −2 , attributed to its elevated Sn/Se content, compact molecular architecture (diameter, 1.5 nm), and excellent film‐forming ability (surface roughness, 0.59 nm). By replacing conventional carboxylate ligands with inorganic selenite, this study addresses longstanding limitations in structural versatility and EUV absorption efficiency inherent to traditional organotin–oxo systems. These findings establish a paradigm for engineering metal–oxide photoresists through ligand‐driven cluster dimensionality control, offering a scalable pathway to high‐sensitivity, high‐resolution patterning for next‐generation semiconductor manufacturing.

Article Details

Volume / Issue Vol. 64, Issue 29
Published July 14, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (7)

J

Juan Wang

Department of Chemical and Biomolecular Engineering

M

Ming‐Bu Luo

State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences Fuzhou Fujian 350002 China

Z

Zi‐Juan Wei

State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 China

E

Er‐Xia Chen

State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian China

J

Jin‐Xia Yang

State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian China

J

Jian Zhang

Q

Qipu Lin

State Key Laboratory of Structural Chemistry