Room-temperature ferromagnetism of chromium-doped molybdenum disulfide synthesized via chemical vapor deposition

Abstract

Two-dimensional (2D) magnetic materials offer promising prospects for applications in magnetic storage and spin field-effect transistors. However, the inherently low Curie temperatures of intrinsic 2D ferromagnetic semiconductor materials pose significant limitations on their practical device applications. An effective approach to achieving room-temperature ferromagnetism involves doping non-magnetic semiconductors with specific magnetic atoms. Here, we present the room-temperature ferromagnetism of chromium (Cr)-doped molybdenum disulfide (MoS2) nanosheets synthesized through chemical vapor deposition. The magnetic hysteresis loops, recorded across a temperature span of 10–300 K, underscore the remarkable stability of their magnetic attributes. To gain deeper microscopic insights into the magnetic properties of Cr-doped MoS2, we conducted first-principles calculations, which further validated our experimental findings. This research underscores a promising pathway for the development of 2D ferromagnetic materials with broad application potential in magnetic storage and spin field-effect transistors.