Role of the channel on the memory window of HfZrOx ferroelectric field-effect transistors with p-type Si-doped InZnOx channel
H
Hyoungjin Park
S
Seokjae Lim
S
Somi Lee
J
Jae Woo Lee
J
Jiyong Woo
Article Details
Journal
Scientific Reports
Volume / Issue
Vol. 16, Issue 1
Published
December 19, 2025
ISSN
2045-2322
Publisher
Nature Portfolio
Authors (5)
H
Hyoungjin Park
S
Seokjae Lim
S
Somi Lee
J
Jae Woo Lee
J
Jiyong Woo
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