Role of structural asymmetry in tailoring electromagnetically induced transparency and figure of merit in terahertz metamaterials

D Dheeshna Nadukandi Purayil (School of Advanced Materials (SAMaT), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) 1 , Bangalore 560064,) N Namitha Nandakumar (School of Advanced Materials (SAMaT), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) 1 , Bangalore 560064,) S Sutopa Modak (Chemistry and Physics of Materials Unit (CPMU), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) 3 , Bangalore 560064,) P Prakash Pitchappa (Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR) 4 , 2 Fusionopolis Way, Innovis #08-02, Singapore 138634,) A Abhishek Kumar

Abstract

Electromagnetically induced transparency (EIT) in metamaterials, a classical analog of quantum EIT, exhibits a sharp transparency window with steep dispersion, enabling applications such as sensing and slow-light devices. Although EIT has been widely demonstrated, systematic investigations into tuning and optimizing the response through structural parameters remain limited. In this work, we present a terahertz metamaterial composed of a double split-ring resonator unit cell, where EIT is tuned by varying the structural asymmetry (α). We evaluate the figure of merit of EIT using two approaches. The first approach considers the product of the quality factor and transmission intensity, while the second is based on the product of the group delay and transmission intensity. Both methods identify intermediate values of α as optimal for achieving a strong and spectrally selective EIT response. This study demonstrates the effectiveness of structural asymmetry in tuning the EIT characteristics and provides insights into the design of adaptable terahertz photonic devices.

Article Details

Volume / Issue Vol. 139, Issue 10
Published March 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

D

Dheeshna Nadukandi Purayil

School of Advanced Materials (SAMaT), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) 1 , Bangalore 560064,

N

Namitha Nandakumar

School of Advanced Materials (SAMaT), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) 1 , Bangalore 560064,

S

Sutopa Modak

Chemistry and Physics of Materials Unit (CPMU), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR) 3 , Bangalore 560064,

P

Prakash Pitchappa

Institute of Microelectronics (IME), Agency for Science, Technology and Research (A*STAR) 4 , 2 Fusionopolis Way, Innovis #08-02, Singapore 138634,

A

Abhishek Kumar