Role of optical phonon in fluoride-ion conductivity of LaF3

A Alex Kutana V Verdad C. Agulto (Institute of Laser Engineering, Osaka University 2 , 2-6 Yamadaoka, Suita, Osaka 565-0871,) R Ryoji Asahi Y Yuji Sugibayashi (R&D Department, Qualtec Co., Ltd. 3 , 4-230 Sambo-cho, Sakai-ku, Sakai, Osaka 590-0906,) M Makoto Nakajima (Institute of Laser Engineering, Osaka University 2 , 2-6 Yamadaoka, Suita, Osaka 565-0871,) T Tsuyoshi Takami (Faculty of Science and Engineering, Otemon Gakuin University 4 , 2-1-15 Nishiai, Ibaraki City, Osaka 567-8502,)

Abstract

Fluoride-ion (F−) conductors have attracted much attention as solid electrolytes for all-solid-state fluoride-ion batteries with high energy densities surpassing those of conventional lithium-ion batteries. Ion conduction is mainly determined by the carrier amount (n) and diffusion coefficient (D), and progress is being made in understanding and controlling n. However, it is necessary to quantitatively evaluate not only D itself but also the factors that govern it. In this study, terahertz time-domain spectroscopy (THz-TDS), Fourier transform infrared spectroscopy, and first-principles calculations are used to address the effective jump attempt frequency that governs D. Phonons contributing to F− ion diffusion span a broad range of frequencies rather than a single vibrational frequency, indicating that more complex multi-phonon processes are at work. Empirical relations indicate that the mode frequency of 3 THz corresponds to an activation barrier of ∼0.5 eV. Phonon absorption around 5 THz for LaF3 involves the F vibration with the long La–F bond length. The THz-TDS conduction increases with the phonon absorption. The loose coupling between F− and counterions to soften the lowest optically active mode increases F− conductivity.

Article Details

Volume / Issue Vol. 163, Issue 24
Published December 28, 2025
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (6)

A

Alex Kutana

V

Verdad C. Agulto

Institute of Laser Engineering, Osaka University 2 , 2-6 Yamadaoka, Suita, Osaka 565-0871,

R

Ryoji Asahi

Y

Yuji Sugibayashi

R&D Department, Qualtec Co., Ltd. 3 , 4-230 Sambo-cho, Sakai-ku, Sakai, Osaka 590-0906,

M

Makoto Nakajima

Institute of Laser Engineering, Osaka University 2 , 2-6 Yamadaoka, Suita, Osaka 565-0871,

T

Tsuyoshi Takami

Faculty of Science and Engineering, Otemon Gakuin University 4 , 2-1-15 Nishiai, Ibaraki City, Osaka 567-8502,