Robust Tunnel TaO <sub>x</sub> Passivating Interlayer Enables Long‐Term Solar Water Oxidation

Y Yuanqi Wang (National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 P.R. China) Y Yinglei Zhu (Jiangsu Key Laboratory for Nano Technology College of Engineering and Applied Sciences Nanjing University Nanjing 210093 P.R. China) L Lijuan Zhang H Huiting Huang (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China) C Changhao Liu (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China) B Bin Gao (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China) W Wangxi Liu (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China) H Huihui Yan J Jingrui Jian (State Key Laboratory of Solid State Microstructures College of Engineering and Applied Sciences Nanjing University Nanjing China) Z Zengguang Huang (School of Science Jiangsu Ocean University Lianyungang 222005 P.R. China) J Jianyong Feng (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China) T Tao Yu Z Zhigang Zou (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China) Z Zhaosheng Li (National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China)

Abstract

Abstract Silicon‐based photoelectrochemical (PEC) cells offer significant advantages for solar‐to‐clean fuel conversion but face challenges such as surface recombination and poor stability, necessitating a comprehensive understanding of device failure mechanisms and effective mitigation strategies. Using nickel‐decorated n‐type silicon (n‐Si/Ni) as a model photoelectrode, we demonstrate that surface restructuring during operation initially passivates surface recombination but eventually blocks photogenerated hole transfer, leading to device failure. To mitigate this challenge, an ultrathin (&lt;1 nm) tantalum oxide (TaO x ) interlayer is introduced via atomic layer deposition (ALD). This TaO x layer serves as both a passivating contact and a corrosion‐resistant coating. The n‐Si/TaO x /Ni electrode achieves an increased photovoltage from 150 to 500 mV during the activation process, and then significantly extends the device lifespan, maintaining over 90% performance for 500 h in 1 M KOH at 1.52 V versus RHE. These results highlight the implementation of amorphous TaO x in enhancing both the efficiency and durability of silicon‐based PEC systems, providing a simultaneously passivating and protective strategy for solar‐to‐fuel conversion technologies under harsh conditions.

Article Details

Volume / Issue Vol. 64, Issue 26
Published June 24, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (14)

Y

Yuanqi Wang

National Laboratory of Solid State Microstructures School of Physics Nanjing University Nanjing 210093 P.R. China

Y

Yinglei Zhu

Jiangsu Key Laboratory for Nano Technology College of Engineering and Applied Sciences Nanjing University Nanjing 210093 P.R. China

L

Lijuan Zhang

H

Huiting Huang

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China

C

Changhao Liu

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China

B

Bin Gao

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China

W

Wangxi Liu

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China

H

Huihui Yan

J

Jingrui Jian

State Key Laboratory of Solid State Microstructures College of Engineering and Applied Sciences Nanjing University Nanjing China

Z

Zengguang Huang

School of Science Jiangsu Ocean University Lianyungang 222005 P.R. China

J

Jianyong Feng

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China

T

Tao Yu

Z

Zhigang Zou

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China

Z

Zhaosheng Li

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Nanjing 210093, China