Revisiting The Role of Entropy for Charge Separation in 1D Pi‐Conjugated Semiconductors

Abstract

AbstractFree carrier generation in organic donor/acceptor heterojunctions and redox‐doped organic semiconductors is poorly understood, since assumed tight electron–hole binding conflicts with observed high free carrier yields. Cornerstone analyses that have guided the field for over 15 years predict that entropy can stabilize free charges in 2D and 3D pi‐conjugated semiconductors but not in 1D systems. Here, the impact of entropy on charge generation in 1D pi‐conjugated semiconductors is revisited by exploiting a greatly simplified system where enthalpy considerations alone should not allow for free charge generation. Noncontact solution‐phase microwave conductivity is used to investigate the carrier density‐dependent conductivity and dielectric constant in isolated chemically doped semiconducting single‐walled carbon nanotubes in a low‐dielectric solvent. Dopant chemical structure dramatically influences the carrier density‐dependent complex conductivity, with bulky dopants facilitating carrier escape even at carrier densities below one carrier per nanotube. Three distinct numerical calculations show that entropic stabilization dramatically lowers the Gibbs energy barrier for free charge generation, explaining the high yield of free carriers, even in 1D. This renewed understanding of entropy's role in carrier generation has important implications for designing organic electronic devices–such as solar cells and thermoelectric energy harvesters–for enhanced carrier yield, conductivity, and performance.