Reversible magneto-ionics in crystallized W–Co20Fe60B20–MgO–HfO2 ultra-thin films with perpendicular magnetic anisotropy

S Song Chen (Department of Applied Physics, School of Medical Imaging) E Elmer Monteblanco (Spin-ion Technologies 1 , 10 Boulevard Thomas Gobert, Palaiseau 91120,) B Benjamin Borie (Spin-ion Technologies 1 , 10 Boulevard Thomas Gobert, Palaiseau 91120,) S Shimpei Ono D Dafiné Ravelosona (Spin-ion Technologies 1 , 10 Boulevard Thomas Gobert, Palaiseau 91120,)

Abstract

We have investigated the electric field (E-field) induced modulation of perpendicular magnetic anisotropy (PMA) in both amorphous and crystalline W/CoFeB/MgO/HfO2 ultra-thin films. We find that in the amorphous state, the E-field effect is volatile and reversible, which is consistent with the conventional electrostatic effect through charge accumulation and depletion. In the crystallized system annealed at 370 °C, we find that two effects are at play: a non-volatile and reversible voltage-induced effect on PMA and an electrostatic response. We discuss these results in terms of higher oxygen mobility at the crystallized CoFeB–MgO interface, which induces a non-volatile magneto-ionic response. Modulating PMA in crystallized CoFeB–MgO materials through ionic migration opens the path to integrating magneto-ionics in full magnetic tunnel junctions.

Article Details

Volume / Issue Vol. 139, Issue 2
Published January 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

S

Song Chen

Department of Applied Physics, School of Medical Imaging

E

Elmer Monteblanco

Spin-ion Technologies 1 , 10 Boulevard Thomas Gobert, Palaiseau 91120,

B

Benjamin Borie

Spin-ion Technologies 1 , 10 Boulevard Thomas Gobert, Palaiseau 91120,

S

Shimpei Ono

D

Dafiné Ravelosona

Spin-ion Technologies 1 , 10 Boulevard Thomas Gobert, Palaiseau 91120,