Revealing the effects of particle shape and distribution on the direct wafer-to-wafer bonding dynamics

T Tao He (Department of Chemical Science, Bernal Institute) W Wenkai Lu (School of Mechanical Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,) Z Zhoulong Xu (Wuhan Chiplet Technology Co., Ltd. 2 , Wuhan 430074,) Z Zhouping Yin (Flexible Electronics Research Center, State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology) B Bin Xie H Hao Wu

Abstract

Particle contamination control is one of the most critical challenges in wafer-to-wafer (W2W) hybrid bonding technology. Particles induce voids at the bonding interface, thereby compromising the bonding quality and reliability. However, the effects of particle shape and distribution on the W2W pre-bonding process have not yet been investigated. In this work, three-dimensional (3D) W2W hybrid bonding analysis involving particles was conducted. The influence of particle on bonding front propagation was analyzed. Besides, the effects of particle shape and position on bonding time, interfacial void size, and upper wafer von Mises stress were quantitatively evaluated. The results show that the presence of particle leads to the split of the bonding front and a pronounced delay in bonding time. Compared with the cylindrical particle, the square particle results in a longer bonding delay (4.4 s vs 3.1 s) and produces a larger void height (17.1 μm vs 11.1 μm). Moreover, it is found that particle contamination significantly amplifies the void defects. Particle position is found to have a non-monotonic influence on bonding dynamics. As the particle location gradually moves away from the wafer center, the area and height of void, as well as the total bonding time exhibit a trend of first increasing and then decreasing. Specifically, a cylindrical particle located at 70–80 mm from wafer center generates the largest void area (up to 2350 mm2), the highest void height (14.8 μm), and the longest bonding time (3.6 s). This study offers a quantitative guidance for contamination control in 3D heterogeneous integration technology.

Article Details

Volume / Issue Vol. 140, Issue 5
Published August 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

T

Tao He

Department of Chemical Science, Bernal Institute

W

Wenkai Lu

School of Mechanical Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,

Z

Zhoulong Xu

Wuhan Chiplet Technology Co., Ltd. 2 , Wuhan 430074,

Z

Zhouping Yin

Flexible Electronics Research Center, State Key Laboratory of Intelligent Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology

B

Bin Xie

H

Hao Wu