Realizing high power factor and thermoelectric performance in band engineered AgSbTe2
Article Details
Authors (20)
Yu Zhang
Xiangya Hospital, Central South University Changsha China
Congcong Xing
Dongyang Wang
Aziz Genç
Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193, Barcelona, Catalonia Spain
Seng Huat Lee
Department of Physics, The Pennsylvania State University, University Park, PA, USA.
Cheng Chang
Zhi Li
Luyao Zheng
Khak Ho Lim
Institute of Zhejiang University-Quzhou, 78 Jiuhua Boulevard North, Quzhou 324000, Zhejiang China
Hangtian Zhu
Rabeya Bosry Smriti
Yu Liu
Shaobo Cheng
Min Hong
Centre for Future Materials, School of Science, Engineering and Digital Technologies
Xiaolei Fan
Wenzhou Key Laboratory of Novel Optoelectronic and Nano Materials, Institute of Wenzhou
Zhiqiang Mao
Department of Physics, The Pennsylvania State University, University Park, PA, USA.
Li-Dong Zhao
Tianmushan Laboratory
Andreu Cabot
Catalonia Institute for Energy Research-IREC, Sant Adrià de Besòs, Barcelona 08930, Spain
Tiejun Zhu
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering
Bed Poudel