Realization of the quantum anomalous Hall effect in germanene/NiXY (X, Y = Br, I, and X ≠ Y) heterostructure through proximity coupling

X Xiang Yin (Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering) Y Yanzhao Wu (School of Materials Science and Engineering) L Li Deng (Zhejiang Key Laboratory of Precise Synthesis of Functional Molecules, Department of Chemistry, School of Science and Research Center for Industries of the Future, Westlake University, 600 Dunyu Road, Hangzhou 310030, P. R. China) J Junwei Tong (Department of Physics) F Fei Wang R Rafaqat Ali Khan (Department of Chemistry, COMSATS University Islamabad 3 , Abbottabad Campus, Abbottabad 22060, Khyber Pakhtunkhwa,) X Xianmin Zhang (Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering)

Abstract

Proximity-induced exchange interactions present a novel avenue for manipulating physical properties in spintronic materials. The germanene (Ge) monolayer exhibits metallic behavior, and the NiXY (X, Y = Br, I, and X ≠ Y) monolayer displays semiconducting behavior. Here, utilizing first-principles calculations, we investigate the magnetic characteristics and topological properties in Ge/NiXY heterostructures induced by proximity coupling. Phonon dispersion and ab initio molecular dynamics simulations confirm their dynamical and thermal stability. Both heterostructures demonstrate in-plane magnetic anisotropy. The critical transition temperatures for Ge/NiBrI and Ge/NiIBr reach up to 108 and 85 K, respectively. With spin–orbit coupling, the Ge/NiBrI heterostructure exhibits half-metallicity, whereas the Ge/NiIBr heterostructure possesses a bandgap of 20.3 meV. Their electronic properties are robust against variations in the Hubbard U values. Remarkably, the Ge/NiIBr heterostructure hosts the quantum anomalous Hall effect with Chern number C = −1, and the easy magnetization axis transitions from in-plane to out-of-plane upon modulation of the interlayer distance. These results establish a versatile platform for proximity coupling engineering and enable practical quantum anomalous Hall devices.

Article Details

Volume / Issue Vol. 140, Issue 4
Published July 28, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (7)

X

Xiang Yin

Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering

Y

Yanzhao Wu

School of Materials Science and Engineering

L

Li Deng

Zhejiang Key Laboratory of Precise Synthesis of Functional Molecules, Department of Chemistry, School of Science and Research Center for Industries of the Future, Westlake University, 600 Dunyu Road, Hangzhou 310030, P. R. China

J

Junwei Tong

Department of Physics

F

Fei Wang

R

Rafaqat Ali Khan

Department of Chemistry, COMSATS University Islamabad 3 , Abbottabad Campus, Abbottabad 22060, Khyber Pakhtunkhwa,

X

Xianmin Zhang

Key Laboratory for Anisotropy and Texture of Materials (Ministry of Education), School of Material Science and Engineering