Random alloy AlInAsSb single photon avalanche diodes with high breakdown probability

Abstract

Emerging quantum technologies depend on developing near-infrared single-photon counting detectors with high detection efficiencies (PDEs) and low dark count rates (DCRs). Single-photon avalanche diodes (SPADs) operating in Geiger-mode are an attractive option for moderate cryogenic operating temperatures. InGaAs/InP SPADs exhibit excellent DCRs, but relatively low PDEs, primarily due to the low avalanche triggering probability (Pav) of InP. Recent simulations have shown that sufficiently thick multipliers made from AlAsSb can readily exhibit much larger Pav values at low over-biases due to their comparatively stronger asymmetry between electron and hole ionization coefficients. AlxIn1−xAsySb1−y is a related antimonide material with a similarly strong ionization coefficient. In this work, the avalanche triggering probability of ∼1 μm thick Al0.79InAsSb multiplier grown on InP is measured. Pav values as large as 85% were attained at room temperature for an over-bias of 8%, confirming the capacity of antimonide-based multipliers to achieve high photon detection efficiencies.