Radiation tolerance of Ga2O3 for harsh environment applications: Neutron irradiation and defect studies

Abstract

Gallium oxide (Ga2O3) has emerged as a promising material for high-power and radiation-tolerant electronics due to its ultra-wide bandgap and excellent thermal stability. In this study, single-crystal β-Ga2O3 was exposed to neutron irradiation for periods up to 300 h to investigate its structural, chemical, electronic, and mechanical response. Post-irradiation examination revealed that the material maintained its monoclinic crystal structure, with no evidence of phase transformation, elemental segregation, or significant bandgap alteration. Atom probe tomography and energy-dispersive spectroscopy confirmed uniform elemental distributions of Ga, O, and Fe, while high-resolution electron energy-loss spectroscopy indicated negligible changes in the electronic structure. Nanoindentation measurements showed an increase in hardness after irradiation, suggesting the formation of irradiation-induced defects and associated radiation-hardening. These findings demonstrate that β-Ga2O3 can withstand low-dose neutron irradiation while preserving its microstructural, chemical, and electronic integrity, highlighting its potential for robust, high-performance devices in extreme radiation environments.