Quantum Interference Effect in Saturated Systems: Effect of Anchoring Group Position on Conductance of Bipiperidines and their in‐situ Derived Dithiocarbamates

U Umar Rashid (Department of Inorganic and Physical Chemistry) A Abdalghani H. S. Daaoub (Quantum Device Modelling Group School of Engineering University of Warwick Coventry CV4 7AL UK) P PA. Sreelakshmi (Department of Inorganic and Physical Chemistry Indian Institute of Science Bangalore 560012 India) S Sara Sangtarash H Hatef Sadeghi V Veerabhadrarao Kaliginedi (Department of Inorganic and Physical Chemistry)

Abstract

Abstract This study investigates quantum interference in σ‐only molecular systems, focusing on the impact of anchoring group nature and its position. Using a combined approach of mechanically controlled break junction experiments and quantum transport calculations, we demonstrate that meta ‐connected σ‐conducting bipiperidine‐based molecular junctions exhibit higher conductance than para‐connected ones. This trend is opposite to that of the trend typically observed in π‐molecular systems, indicating the existence of distinctly different quantum interference phenomenon in σ‐only molecular systems. Further, we show that anchoring group modifications achieved through in‐situ dithiocarbamylation significantly alters the conductance and decay factors. We also elucidate the mechanism behind multiple conductance features observed in aliphatic bipiperidines with cyclic secondary amine and dithiocarbamate anchoring groups. This work demonstrates σ‐quantum interference in bipiperidine‐based molecular systems and highlights how changes in junction configuration, nature of the anchoring group and its position can be used to control conductance in σ‐only molecular systems.

Article Details

Volume / Issue Vol. 64, Issue 47
Published November 17, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (6)

U

Umar Rashid

Department of Inorganic and Physical Chemistry

A

Abdalghani H. S. Daaoub

Quantum Device Modelling Group School of Engineering University of Warwick Coventry CV4 7AL UK

P

PA. Sreelakshmi

Department of Inorganic and Physical Chemistry Indian Institute of Science Bangalore 560012 India

S

Sara Sangtarash

H

Hatef Sadeghi

V

Veerabhadrarao Kaliginedi

Department of Inorganic and Physical Chemistry