Quantum Dot Luminescence Microspheres Enable Ultra‐Efficient and Bright Micro‐LEDs

T Ting Gong T Tongtong Xuan (Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials College of Materials Xiamen University Xiamen 361005 P. R. China) W Wenhao Bai (Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials College of Materials Xiamen University Xiamen 361005 P. R. China) H Haorui Dong (Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials College of Materials Xiamen University Xiamen 361005 P. R. China) K Kai Huang R Rong‐Jun Xie (College of Materials Xiamen University Xiamen 361005 China)

Abstract

Abstract Quantum dot (QD)‐converted micrometer‐scale light‐emitting diodes (micro‐LEDs) are regarded as an effective solution for achieving high‐performance full‐color micro‐LED displays because of their narrow‐band emission, simplified mass transfer, facile drive circuits, and low cost. However, these micro‐LEDs suffer from significant blue light leakage and unsatisfactory electroluminescence properties due to the poor light conversion efficiency and stability of the QDs. Herein, the construction of green and red QD luminescence microspheres with the simultaneously high conversion efficiency of blue light and strong photoluminescence stability are proposed. These luminescence microspheres exhibit high external photoluminescence quantum yields exceeding 46% under 450 nm excitation, along with excellent reliability against blue light, heat, and water‐oxygen degradation, owing to the waveguide and spatial confinement effects of the microspheres. The microsphere‐based green and red micro‐LEDs achieve world‐record external quantum efficiencies of 40.8% and 22.1%, respectively, and high brightness values of 1.7 × 10 8 and 7.6 × 10 7  cd m −2 , respectively. Finally, 0.6 inch red, green, and blue monochrome micro‐LED displays are demonstrated by integrating microsphere‐converted micro‐LED arrays with thin‐film transistor backplanes, which show a pixel resolution as high as 1700 PPI and brightness exceeding 10 000 cd m −2 .

Article Details

Volume / Issue Vol. 37, Issue 9
Published March 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (6)

T

Ting Gong

T

Tongtong Xuan

Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials College of Materials Xiamen University Xiamen 361005 P. R. China

W

Wenhao Bai

Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials College of Materials Xiamen University Xiamen 361005 P. R. China

H

Haorui Dong

Fujian Key Laboratory of Surface and Interface Engineering for High Performance Materials College of Materials Xiamen University Xiamen 361005 P. R. China

K

Kai Huang

R

Rong‐Jun Xie

College of Materials Xiamen University Xiamen 361005 China