Quantifying the dislocation content of atomically resolved grain boundary line defects using the Nye tensor
Abstract
The Nye tensor, which quantifies the density of Burgers vector for a given dislocation line direction, can be effectively used to characterize dislocation content in bulk crystals from atomic-resolution transmission electron microscopy images. The Nye tensor can be calculated from these images, in part because the reference state is simply defined by the lattice of the perfect crystal. The application of the Nye tensor to interfacial line defects, for which the natural reference state is the dichromatic pattern of the two grains in their reference orientation, poses additional challenges. In this work, we present a method that employs the Nye tensor to characterize the edge dislocation content of line defects at grain boundaries from atomic-resolution images. This approach enables us to rapidly characterize all edge dislocation content along a grain boundary. Additionally, the Nye tensor provides information about line defect core structure. We demonstrate this method on two exemplar defects: a twin boundary disconnection and a facet junction in face-centered cubic Au.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (4)
Ian S. Winter
Sandia National Laboratories , Livermore, California 94550,
Alejandro Hinojos
Sandia National Laboratories , Livermore, California 94550,
James E. Nathaniel
Sandia National Laboratories , Livermore, California 94550,
Douglas L. Medlin
Sandia National Laboratories , Livermore, California 94550,