Publisher's note: “High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes” [J. Appl. Phys. 137, 055703 (2025)]

H H. J. von Bardeleben (Institut des NanoSciences de Paris (INSP), Sorbonne Université 1 , 4 place Jussieu, Paris 75005,) X Xuanze Zhou J Jingbo Zhou G Guangwei Xu (School of Microelectronics, University of Science and Technology of China 1 , No. 96, Jinzhai Road, Hefei, Anhui 230026,) S Shibing Long (School of Integrated Circuits, University of Science and Technology of China 1 , Hefei 230026,) U U. Gerstmann (Lehrstuhl für Theoretische Materialphysik, Universität Paderborn 4 , 33098 Paderborn,)

Article Details

Volume / Issue Vol. 137, Issue 8
Published February 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

H

H. J. von Bardeleben

Institut des NanoSciences de Paris (INSP), Sorbonne Université 1 , 4 place Jussieu, Paris 75005,

X

Xuanze Zhou

J

Jingbo Zhou

G

Guangwei Xu

School of Microelectronics, University of Science and Technology of China 1 , No. 96, Jinzhai Road, Hefei, Anhui 230026,

S

Shibing Long

School of Integrated Circuits, University of Science and Technology of China 1 , Hefei 230026,

U

U. Gerstmann

Lehrstuhl für Theoretische Materialphysik, Universität Paderborn 4 , 33098 Paderborn,