Publisher's note: “High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes” [J. Appl. Phys. 137, 055703 (2025)]
H
H. J. von Bardeleben
(Institut des NanoSciences de Paris (INSP), Sorbonne Université 1 , 4 place Jussieu, Paris 75005,)
X
Xuanze Zhou
J
Jingbo Zhou
G
Guangwei Xu
(School of Microelectronics, University of Science and Technology of China 1 , No. 96, Jinzhai Road, Hefei, Anhui 230026,)
S
Shibing Long
(School of Integrated Circuits, University of Science and Technology of China 1 , Hefei 230026,)
U
U. Gerstmann
(Lehrstuhl für Theoretische Materialphysik, Universität Paderborn 4 , 33098 Paderborn,)
Article Details
Journal
Journal of Applied Physics
Volume / Issue
Vol. 137, Issue 8
Published
February 28, 2025
ISSN
0021-8979
Publisher
American Institute of Physics
Journal Info
Journal of Applied Physics
American Institute of Physics
ISSN: 0021-8979 Physical Sciences
Authors (6)
H
H. J. von Bardeleben
Institut des NanoSciences de Paris (INSP), Sorbonne Université 1 , 4 place Jussieu, Paris 75005,
X
Xuanze Zhou
J
Jingbo Zhou
G
Guangwei Xu
School of Microelectronics, University of Science and Technology of China 1 , No. 96, Jinzhai Road, Hefei, Anhui 230026,
S
Shibing Long
School of Integrated Circuits, University of Science and Technology of China 1 , Hefei 230026,
U
U. Gerstmann
Lehrstuhl für Theoretische Materialphysik, Universität Paderborn 4 , 33098 Paderborn,
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