Journal of Applied Physics

Publisher's note: “A 1 kV sub-nanosecond electrical pulse generated by a linear GaAs photoconductive semiconductor switch and its characterization” [J. Appl. Phys. 137, 024504 (2025)]

H Hongqi Wang (School of Science, Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi'an University of Technology , Xi'an 710048,) W Wei Shi C Cheng Ma M Meilin Wu (Key Laboratory of Modern Teaching Technology, Ministry of Education, Shaanxi Normal University) J Jiang Tao (School of Science, Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi'an University of Technology , Xi'an 710048,) K Kaipeng Chen (School of Science, Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi'an University of Technology , Xi'an 710048,)
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Article Details

Volume / Issue Vol. 137, Issue 4
Published January 28, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics
ISSN: 0021-8979 Physical Sciences

Authors (6)

H

Hongqi Wang

School of Science, Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi'an University of Technology , Xi'an 710048,

W

Wei Shi

C

Cheng Ma

M

Meilin Wu

Key Laboratory of Modern Teaching Technology, Ministry of Education, Shaanxi Normal University

J

Jiang Tao

School of Science, Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi'an University of Technology , Xi'an 710048,

K

Kaipeng Chen

School of Science, Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi'an University of Technology , Xi'an 710048,

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