Probing ultraweak in-plane magnetic anisotropy within a two-dimensional layered antiferromagnet

Y Yijie Fan (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) Y Yihong Xu (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) R Renji Bian (School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China) R Ruan Zhang (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) J Junning Mei (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) J Jiaxin Wu B Binghe Xie (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) S Shuangxing Zhu (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) Y Yu Chen F Feifan Gu (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) Y Ying Liu T Takashi Taniguchi K Kenji Watanabe F Fucai Liu (School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China) X Xinghan Cai (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University)

Abstract

Magnetic anisotropy plays a crucial role in determining the critical behavior and phase transitions in two-dimensional magnetic systems. It is also required for the design of thin-film spintronic devices. Despite its significance, sensing extremely weak anisotropy has proven challenging in van der Waals antiferromagnetic/ferrimagnetic materials. Here, we first employ simulations of micromagnetic energy function in few-layer easy-plane antiferromagnetic systems with a weak additional uniaxial anisotropy and unveil an intriguing even–odd effect closely linked to low-field spin–flop behaviors. We further perform tunneling magneto-conductance measurements on a model 2D antiferromagnetic insulator, CrCl 3 , exhibiting near-ideal easy-plane anisotropy. The magnetic field-controlled tunneling current at low temperature aligns well with simulated in-plane anisotropic spin-configuration, providing direct experimental evidence for detecting magnetic anisotropy field around 1 mT. Our work creates opportunities for finely characterizing magnetic structures and behaviors in 2D antiferromagnetic/ferrimagnetic systems, with potential applications in spintronics such as data storage and magnetic sensing.

Article Details

Volume / Issue Vol. 122, Issue 15
Published April 15, 2025
ISSN 0027-8424
Publisher National Academy of Sciences

Authors (15)

Y

Yijie Fan

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

Y

Yihong Xu

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

R

Renji Bian

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China

R

Ruan Zhang

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

J

Junning Mei

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

J

Jiaxin Wu

B

Binghe Xie

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

S

Shuangxing Zhu

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

Y

Yu Chen

F

Feifan Gu

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

Y

Ying Liu

T

Takashi Taniguchi

K

Kenji Watanabe

F

Fucai Liu

School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China

X

Xinghan Cai

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University