Probing the modulation of internal stress field on phase transitions in sodium niobate by polarized Raman spectroscopy

X Xinlin Jiang (Department of Burn and Plastic Surgery, Guangzhou Red Cross Hospital) H Han Cui (Department of Materials Science and Engineering, Stanford University) X Xiaofei Su (College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,) L Liguang Wang (College of Chemical and Biological Engineering) C Changming Zhu (College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,) G Guibo Yu (College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,) S Si Lu M Maoying Qin (College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,) N Na Shen X Xiaoxuan Zheng (Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China)

Abstract

Sodium niobate (NaNbO3, NN) serves as an ideal model system for investigating the origins of diverse electrical polarization behaviors owing to its rich polymorphism and complex phase transition sequences. Its intrinsic antiferroelectric character further exhibits significant potential for applications in pulsed power energy storage and multi-state non-volatile memory technologies. In particular, although the P and R phases in NN both display antiferroelectric ordering, they exhibit distinct superlattice behaviors. These structural differences give rise to intriguing physical phenomena during the phase transition process, thereby garnering significant research interest. Previous studies often attribute the complex phase evolution in NN to competitive interactions mediated by a minor Q phase component under internal stress fields. Furthermore, these investigations primarily treat the P phase as the dominant structure, which significantly hinders a thorough understanding of stress field effects on the P–R phase transition process. In this study, NN samples predominantly exhibiting the Q phase at room temperature were prepared through process tuning. Furthermore, by varying defect concentrations, a series of NN systems with graded internal stress gradients were constructed. Furthermore, leveraging the sensitive detection capability of polarized Raman spectroscopy for polarizability changes, we investigated the in situ evolution of various phonons under temperature-field conditions. The study explores the mechanisms of phonon synergistic contributions induced by stress gradients during the heating of NN from the P to the R phase. These findings provide an important research foundation for understanding antiferroelectric behavior evolution in NN and for developing high-performance NN-based antiferroelectric devices.

Article Details

Volume / Issue Vol. 139, Issue 9
Published March 07, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (10)

X

Xinlin Jiang

Department of Burn and Plastic Surgery, Guangzhou Red Cross Hospital

H

Han Cui

Department of Materials Science and Engineering, Stanford University

X

Xiaofei Su

College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,

L

Liguang Wang

College of Chemical and Biological Engineering

C

Changming Zhu

College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,

G

Guibo Yu

College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,

S

Si Lu

M

Maoying Qin

College of Physics and Technology, Guangxi Normal University and University Engineering Research Center of Advanced Functional Materials and Intelligent Sensing 1 , Guangxi, Guilin 541004,

N

Na Shen

X

Xiaoxuan Zheng

Hefei National Research Center for Physical Sciences at the Microscale, Department of Chemical Physics, University of Science and Technology of China, Hefei 230026, China