Pressure induced structural transition and optoelectronic modification in inorganic metavanadate phosphor

Z Zhenfang Xing Y Yuntao Jie (Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University 3 , Xuzhou 221116,) Y Yuqi Sun X Xingxing Zhao D Di Peng S Songhao Guo (Center for High Pressure Science and Technology Advanced Research (HPSTAR)) Y Yifan Zhang C Congcong Chen (Department of Chemistry) T Tongge Xu (State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University 1 , Changchun 130012,) Z Ziyao Liu (State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University 1 , Changchun 130012,) G Gui Wang (Center for High Pressure Science and Technology Advanced Research 2 , Shanghai 201203,) X Xujie Lü (Center for High Pressure Science and Technology Advanced Research (HPSTAR)) Z Zhidan Zeng Y Yonghao Han (State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University 1 , Changchun 130012,) L Lin Zhao (Laboratory of Atmospheric Environment and Pollution Control) M Meiling Xu (Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering) Q Qiaoshi Zeng

Abstract

AVO3 metavanadates (A: alkali metal) have been reported as promising inorganic white-light-emitting phosphors due to their self-activated broadband luminescence caused by the charge transfer transition in the VO4 tetrahedra. In particular, CsVO3 attracts much attention due to its highest quantum efficiency. Here, the optical and structural properties of CsVO3 are investigated under high pressure by a combination of theoretical and experimental studies. A pressure-induced structural transition from the orthorhombic to monoclinic phase is found by crystal structure prediction and further verified by x-ray diffraction and Raman spectroscopy measurements. The structural transition is accompanied by the distortion and reorientation of VO4 tetrahedra, resulting in an ultrabroad emission tunability both in peak position (from 542 to 672 nm) and full-width at half-maximum (from 158 to 194 nm) and, therefore, making CsVO3 present a white-light emission tendency after pressurization. Moreover, absorption spectra and first-principles calculations reveal a direct-indirect bandgap transition at ∼12 GPa, corresponding to the structural phase transition. These results provide new insights into the structural and optical modulation of metavanadate phosphor and promote the development of inorganic solid luminescent materials under pressure.

Article Details

Volume / Issue Vol. 164, Issue 16
Published April 28, 2026
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (17)

Z

Zhenfang Xing

Y

Yuntao Jie

Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering, Jiangsu Normal University 3 , Xuzhou 221116,

Y

Yuqi Sun

X

Xingxing Zhao

D

Di Peng

S

Songhao Guo

Center for High Pressure Science and Technology Advanced Research (HPSTAR)

Y

Yifan Zhang

C

Congcong Chen

Department of Chemistry

T

Tongge Xu

State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University 1 , Changchun 130012,

Z

Ziyao Liu

State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University 1 , Changchun 130012,

G

Gui Wang

Center for High Pressure Science and Technology Advanced Research 2 , Shanghai 201203,

X

Xujie Lü

Center for High Pressure Science and Technology Advanced Research (HPSTAR)

Z

Zhidan Zeng

Y

Yonghao Han

State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University 1 , Changchun 130012,

L

Lin Zhao

Laboratory of Atmospheric Environment and Pollution Control

M

Meiling Xu

Laboratory of Quantum Functional Materials Design and Application, School of Physics and Electronic Engineering

Q

Qiaoshi Zeng