Pressure-induced nitrogen-rich GeN20 with pentazolate units

L Lulu Liu S Shoutao Zhang (State Key Laboratory of Integrated Optoelectronics and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, School of Physics, Northeast Normal University 3 , Changchun 130024,) D Dinghui Wang (School of Materials Science and Physics, China University of Mining and Technology 4 , Xuzhou 221116,) L Lei Zhang H Haijun Zhang (Dalian Institute of Chemical Physics, Chinese Academy of Sciences)

Abstract

Polynitride compounds have recently attracted great attention because of their unique properties, including exotic nitrogen motifs and high energy densities. Among them, metal-bearing nitrogen-rich compounds with pentazolate anion (cyclo-N5−) are highly desirable in basic research and applications. In this article, we conduct a comprehensive simulation of the pressurized germanium–nitrogen system based on the strategy of introducing a small amount of metal into nitrogen and designing a previously unknown unconventional stoichiometric material, GeN20, being stable at 49 GPa through a first-principles structure search method. Strikingly, the cyclo-N5− anionic unit, acting as an energy storage carrier, is revealed in Ge(N5)4, the formation mechanism of which is attributed to strong covalent N–N bonds and charge transfer from Ge to N. Furthermore, the robust dynamic, mechanical, and thermal stabilities of Ge(N5)4 predict its feasibility of synthesis in the future. In addition, Ge(N5)4 has a relatively high energy density (4.1 kJ g−1), which is comparable to the energy density of TNT (4.2 kJ g−1). Remarkably, Ge(N5)4 has a high detonation pressure (619 kbar) and a high explosion velocity (11.42 km s−1), which are approximately three times the detonation pressure of TNT (190 kbar) and twice the explosion velocity of TNT (6.9 km s−1), respectively, and it produces a more environmentally friendly detonation product composition. Moreover, Ge(N5)4 hosts an indirect bandgap of 3.0 eV and exhibits optical absorption performance. These findings have valuable implications for the rational design and synthesis of novel multifunctional nitrogen-based materials.

Article Details

Volume / Issue Vol. 162, Issue 19
Published May 21, 2025
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (5)

L

Lulu Liu

S

Shoutao Zhang

State Key Laboratory of Integrated Optoelectronics and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, School of Physics, Northeast Normal University 3 , Changchun 130024,

D

Dinghui Wang

School of Materials Science and Physics, China University of Mining and Technology 4 , Xuzhou 221116,

L

Lei Zhang

H

Haijun Zhang

Dalian Institute of Chemical Physics, Chinese Academy of Sciences