Pressure-induced electronic transition in vacancy-ordered halide double perovskite Cs2TeBr6

D Debabrata Samanta (Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, Nadia 741246, West Bengal,) S Suvashree Mukherjee (Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, Nadia 741246, West Bengal,) A Asish Kumar Mishra (National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, 741246 Nadia, West Bengal,) B Bhagyashri Giri (National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, 741246 Nadia, West Bengal,) S Sonu Pratap Chaudhary (Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata 2 , Mohanpur 741246,) K Konstantin Glazyrin S Sayan Bhattacharyya (Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata 2 , Mohanpur 741246,) G Goutam Dev Mukherjee (Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, Nadia 741246, West Bengal,)

Abstract

We report high-pressure x-ray diffraction, Raman scattering, photoluminescence, and absorption measurements on vacancy-ordered halide double perovskite Cs2TeBr6. An electronic transition becomes apparent at around 2.3 GPa, characterized by anomalous behavior in the normalized pressure as a function of the Eulerian strain, a broad minimum in Raman linewidth, and a slope change in the linear pressure variation of a Raman mode frequency. The large compressibility and the observed anomalies in Raman scattering suggest that the material is soft and exhibits a strong electron–phonon coupling. The broad emission below the bandgap is attributed to the recombination of self-trapped excitons. The Cs2TeBr6 crystal, consisting of undistorted octahedra, exhibits substantial emission enhancement and bandgap narrowing under pressure. The electronic transition is further supported by the observed emission maximum and a small kink in the pressure variation of the bandgap at around 2.3 GPa.

Article Details

Volume / Issue Vol. 138, Issue 3
Published July 21, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (8)

D

Debabrata Samanta

Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, Nadia 741246, West Bengal,

S

Suvashree Mukherjee

Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, Nadia 741246, West Bengal,

A

Asish Kumar Mishra

National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, 741246 Nadia, West Bengal,

B

Bhagyashri Giri

National Centre for High Pressure Studies, Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, 741246 Nadia, West Bengal,

S

Sonu Pratap Chaudhary

Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata 2 , Mohanpur 741246,

K

Konstantin Glazyrin

S

Sayan Bhattacharyya

Department of Chemical Sciences, and Centre for Advanced Functional Materials, Indian Institute of Science Education and Research (IISER) Kolkata 2 , Mohanpur 741246,

G

Goutam Dev Mukherjee

Department of Physical Sciences, Indian Institute of Science Education and Research Kolkata 1 , Mohanpur Campus, Mohanpur, Nadia 741246, West Bengal,